Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

Michael J. Moody; Alex Henning; Titel Jurca; Ju Ying Shang; Hadallia Bergeron; Itamar Balla; Jack N. Lding; Emily A. Weiss; Mark C. Hersam; Tracy L. Lohr; Tobin J. Marks; Lincoln J. Lauhon

doi:10.1021/acs.chemmater.8b01171

Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂

Michael J. Moody, Alex Henning, Titel Jurca, Ju Ying Shang, Hadallia Bergeron, Itamar Balla, Jack N. Lding, Emily A. Weiss, Mark C. Hersam, Tracy L. Lohr, Tobin J. Marks, Lincoln J. Lauhon^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to deposit molybdenum oxides with controlled molybdenum oxidation states. The optical bandgaps and resistivities increase with increasing oxygen content, following the same trends as crystalline molybdenum oxides. The study dopes MoS₂ by depositing a MoO_x overlayer and tune the threshold voltage shift in thin film transistors (TFTs) from positive (p-type) to negative (n-type) by tuning the oxide composition. Low hysteresis in sweeps of the transistor gate voltage, an absence of strain, and reversibility upon oxide etching together suggest that this process maintains the van der Waals interface without significant chemical changes, and should be applicable as a doping strategy for 2D systems.

Original language	English (US)
Pages (from-to)	3628-3632
Number of pages	5
Journal	Chemistry of Materials
Volume	30
Issue number	11
DOIs	https://doi.org/10.1021/acs.chemmater.8b01171
State	Published - Jun 12 2018

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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10.1021/acs.chemmater.8b01171

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Moody, M. J., Henning, A., Jurca, T., Shang, J. Y., Bergeron, H., Balla, I., Lding, J. N., Weiss, E. A., Hersam, M. C., Lohr, T. L., Marks, T. J., & Lauhon, L. J. (2018). Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂ Chemistry of Materials, 30(11), 3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171

@article{a09abc68a296415bb019a2ab1c6cac46,

title = "Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2 ",

abstract = "A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to deposit molybdenum oxides with controlled molybdenum oxidation states. The optical bandgaps and resistivities increase with increasing oxygen content, following the same trends as crystalline molybdenum oxides. The study dopes MoS2 by depositing a MoOx overlayer and tune the threshold voltage shift in thin film transistors (TFTs) from positive (p-type) to negative (n-type) by tuning the oxide composition. Low hysteresis in sweeps of the transistor gate voltage, an absence of strain, and reversibility upon oxide etching together suggest that this process maintains the van der Waals interface without significant chemical changes, and should be applicable as a doping strategy for 2D systems.",

author = "Moody, {Michael J.} and Alex Henning and Titel Jurca and Shang, {Ju Ying} and Hadallia Bergeron and Itamar Balla and Lding, {Jack N.} and Weiss, {Emily A.} and Hersam, {Mark C.} and Lohr, {Tracy L.} and Marks, {Tobin J.} and Lauhon, {Lincoln J.}",

note = "Funding Information: M.J.M. acknowledges numerous helpful discussions with Dr. Jonathan D. Emery. M.J.M. also acknowledges Dr. Kan-Sheng Chen for supplying CVD graphene and Spencer A. Wells for discussion. This work was supported by the NSF via EFRI-1433510 (M.J.M., T.J.) and DMR-1720139 (A.H., J.N.O.) and by U.S. Department of Commerce, National Institute of Standards and Technology under financial assistance award number 70NANB14H012 (J.Y.S, H.B, I.B.). It made use of the J. B. Cohen X-ray Diffraction Facility and the Keck-II, EPIC, and SPID facilities of the NUANCE Center at Northwestern University, which have received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the MRSEC program (NSF DMR-1121262) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. M.J.M. gratefully acknowledges support from the Ryan Fellowship and the Northwestern University International Institute for Nanotechnology. A.H. acknowledges the support of a Research Fellowship from the Deutsche Forschungsgemeinschaft (Grant HE 7999/1-1). H.B. acknowledges support from the NSERC Postgraduate Scholarship-Doctoral Program and National Science Foundation Graduate Research Fellowship.",

year = "2018",

month = jun,

day = "12",

doi = "10.1021/acs.chemmater.8b01171",

language = "English (US)",

volume = "30",

pages = "3628--3632",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "11",

}

Moody, MJ, Henning, A, Jurca, T, Shang, JY, Bergeron, H, Balla, I, Lding, JN, Weiss, EA , Hersam, MC, Lohr, TL, Marks, TJ & Lauhon, LJ 2018, 'Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂ ', Chemistry of Materials, vol. 30, no. 11, pp. 3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171

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T1 - Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

AU - Moody, Michael J.

AU - Henning, Alex

AU - Jurca, Titel

AU - Shang, Ju Ying

AU - Bergeron, Hadallia

AU - Balla, Itamar

AU - Lding, Jack N.

AU - Weiss, Emily A.

AU - Hersam, Mark C.

AU - Lohr, Tracy L.

AU - Marks, Tobin J.

AU - Lauhon, Lincoln J.

N1 - Funding Information: M.J.M. acknowledges numerous helpful discussions with Dr. Jonathan D. Emery. M.J.M. also acknowledges Dr. Kan-Sheng Chen for supplying CVD graphene and Spencer A. Wells for discussion. This work was supported by the NSF via EFRI-1433510 (M.J.M., T.J.) and DMR-1720139 (A.H., J.N.O.) and by U.S. Department of Commerce, National Institute of Standards and Technology under financial assistance award number 70NANB14H012 (J.Y.S, H.B, I.B.). It made use of the J. B. Cohen X-ray Diffraction Facility and the Keck-II, EPIC, and SPID facilities of the NUANCE Center at Northwestern University, which have received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the MRSEC program (NSF DMR-1121262) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. M.J.M. gratefully acknowledges support from the Ryan Fellowship and the Northwestern University International Institute for Nanotechnology. A.H. acknowledges the support of a Research Fellowship from the Deutsche Forschungsgemeinschaft (Grant HE 7999/1-1). H.B. acknowledges support from the NSERC Postgraduate Scholarship-Doctoral Program and National Science Foundation Graduate Research Fellowship.

PY - 2018/6/12

Y1 - 2018/6/12

N2 - A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to deposit molybdenum oxides with controlled molybdenum oxidation states. The optical bandgaps and resistivities increase with increasing oxygen content, following the same trends as crystalline molybdenum oxides. The study dopes MoS2 by depositing a MoOx overlayer and tune the threshold voltage shift in thin film transistors (TFTs) from positive (p-type) to negative (n-type) by tuning the oxide composition. Low hysteresis in sweeps of the transistor gate voltage, an absence of strain, and reversibility upon oxide etching together suggest that this process maintains the van der Waals interface without significant chemical changes, and should be applicable as a doping strategy for 2D systems.

AB - A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to deposit molybdenum oxides with controlled molybdenum oxidation states. The optical bandgaps and resistivities increase with increasing oxygen content, following the same trends as crystalline molybdenum oxides. The study dopes MoS2 by depositing a MoOx overlayer and tune the threshold voltage shift in thin film transistors (TFTs) from positive (p-type) to negative (n-type) by tuning the oxide composition. Low hysteresis in sweeps of the transistor gate voltage, an absence of strain, and reversibility upon oxide etching together suggest that this process maintains the van der Waals interface without significant chemical changes, and should be applicable as a doping strategy for 2D systems.

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DO - 10.1021/acs.chemmater.8b01171

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SN - 0897-4756

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SP - 3628

EP - 3632

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 11

ER -

Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂

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Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

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Dataset for Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

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Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂