Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReOx Incorporation in a Metal-Organic Framework

Martino Rimoldi; Joseph T. Hupp; Omar K. Farha

doi:10.1021/acsami.7b12303

Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReO_x Incorporation in a Metal-Organic Framework

Martino Rimoldi, Joseph T. Hupp, Omar K. Farha^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article

11 Scopus citations

Abstract

Methyltrioxorhenium (ReO₃Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe₃). The growth rate of the smooth Re-Al oxide films, with general stoichiometry Re_xAl_yO_3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 Å/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO₃Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.

Original language	English (US)
Pages (from-to)	35067-35074
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	40
DOIs	https://doi.org/10.1021/acsami.7b12303
State	Published - Oct 11 2017

Keywords

atomic layer deposition
gas flow
hydrogenation
metal-organic framework
rhenium oxide
thin film
trimethylaluminum

ASJC Scopus subject areas

Materials Science(all)

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title = "Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReOx Incorporation in a Metal-Organic Framework",

abstract = "Methyltrioxorhenium (ReO3Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe3). The growth rate of the smooth Re-Al oxide films, with general stoichiometry RexAlyO3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 {\AA}/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO3Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.",

keywords = "atomic layer deposition, gas flow, hydrogenation, metal-organic framework, rhenium oxide, thin film, trimethylaluminum",

author = "Martino Rimoldi and Hupp, {Joseph T.} and Farha, {Omar K.}",

year = "2017",

month = oct,

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doi = "10.1021/acsami.7b12303",

language = "English (US)",

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publisher = "American Chemical Society",

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AU - Rimoldi, Martino

AU - Hupp, Joseph T.

AU - Farha, Omar K.

PY - 2017/10/11

Y1 - 2017/10/11

N2 - Methyltrioxorhenium (ReO3Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe3). The growth rate of the smooth Re-Al oxide films, with general stoichiometry RexAlyO3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 Å/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO3Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.

AB - Methyltrioxorhenium (ReO3Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe3). The growth rate of the smooth Re-Al oxide films, with general stoichiometry RexAlyO3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 Å/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO3Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.

KW - atomic layer deposition

KW - gas flow

KW - hydrogenation

KW - metal-organic framework

KW - rhenium oxide

KW - thin film

KW - trimethylaluminum

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