Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReOx Incorporation in a Metal-Organic Framework

Martino Rimoldi; Joseph T. Hupp; Omar K. Farha

doi:10.1021/acsami.7b12303

Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReO_x Incorporation in a Metal-Organic Framework

Martino Rimoldi, Joseph T. Hupp, Omar K. Farha^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Methyltrioxorhenium (ReO₃Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe₃). The growth rate of the smooth Re-Al oxide films, with general stoichiometry Re_xAl_yO_3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 Å/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO₃Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.

Original language	English (US)
Pages (from-to)	35067-35074
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	40
DOIs	https://doi.org/10.1021/acsami.7b12303
State	Published - Oct 11 2017

Keywords

atomic layer deposition
gas flow
hydrogenation
metal-organic framework
rhenium oxide
thin film
trimethylaluminum

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1021/acsami.7b12303

Cite this

@article{cb328c27a0c5446780963cb5c0a36be9,

title = "Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReOx Incorporation in a Metal-Organic Framework",

abstract = "Methyltrioxorhenium (ReO3Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe3). The growth rate of the smooth Re-Al oxide films, with general stoichiometry RexAlyO3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 {\AA}/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO3Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.",

keywords = "atomic layer deposition, gas flow, hydrogenation, metal-organic framework, rhenium oxide, thin film, trimethylaluminum",

author = "Martino Rimoldi and Hupp, {Joseph T.} and Farha, {Omar K.}",

note = "Funding Information: This work was supported as part of the Inorganometallic Catalysis Design Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award #DE-SC0012702. This work made use of the EPIC, Keck-II, and SPID facilities of Northwestern University{\textquoteright}s NUANCE Center, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), the MRSEC program (NSF DMR-1121262) at the Materials Research Center, the International Institute for Nanotechnology (IIN), the Keck Foundation, and the State of Illinois, through the IIN. Metal analyses were performed at the Northwestern University Quantitative Bioelement Imaging Center (QBIC). Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = oct,

day = "11",

doi = "10.1021/acsami.7b12303",

language = "English (US)",

volume = "9",

pages = "35067--35074",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "40",

}

TY - JOUR

T1 - Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReOx Incorporation in a Metal-Organic Framework

AU - Rimoldi, Martino

AU - Hupp, Joseph T.

AU - Farha, Omar K.

N1 - Funding Information: This work was supported as part of the Inorganometallic Catalysis Design Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award #DE-SC0012702. This work made use of the EPIC, Keck-II, and SPID facilities of Northwestern University’s NUANCE Center, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), the MRSEC program (NSF DMR-1121262) at the Materials Research Center, the International Institute for Nanotechnology (IIN), the Keck Foundation, and the State of Illinois, through the IIN. Metal analyses were performed at the Northwestern University Quantitative Bioelement Imaging Center (QBIC). Publisher Copyright: © 2017 American Chemical Society.

PY - 2017/10/11

Y1 - 2017/10/11

N2 - Methyltrioxorhenium (ReO3Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe3). The growth rate of the smooth Re-Al oxide films, with general stoichiometry RexAlyO3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 Å/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO3Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.

AB - Methyltrioxorhenium (ReO3Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe3). The growth rate of the smooth Re-Al oxide films, with general stoichiometry RexAlyO3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 Å/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO3Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.

KW - atomic layer deposition

KW - gas flow

KW - hydrogenation

KW - metal-organic framework

KW - rhenium oxide

KW - thin film

KW - trimethylaluminum

UR - http://www.scopus.com/inward/record.url?scp=85031115515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031115515&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b12303

DO - 10.1021/acsami.7b12303

M3 - Article

C2 - 28929746

AN - SCOPUS:85031115515

VL - 9

SP - 35067

EP - 35074

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 40

ER -