Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReOx Incorporation in a Metal-Organic Framework

Martino Rimoldi, Joseph T. Hupp, Omar K. Farha*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Methyltrioxorhenium (ReO3Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe3). The growth rate of the smooth Re-Al oxide films, with general stoichiometry RexAlyO3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 Å/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO3Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.

Original languageEnglish (US)
Pages (from-to)35067-35074
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number40
StatePublished - Oct 11 2017


  • atomic layer deposition
  • gas flow
  • hydrogenation
  • metal-organic framework
  • rhenium oxide
  • thin film
  • trimethylaluminum

ASJC Scopus subject areas

  • Materials Science(all)


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