Keyphrases
Atomic Layers
100%
Silica
100%
Reaction Sequence
100%
Si(111)
100%
SiCl4
100%
Layer Growth
100%
Half Reaction
42%
Fourier Transform Infrared Spectroscopy (FT-IR)
28%
Ultra-high Vacuum
28%
Self-limiting
28%
Surface Species
28%
Surface Analysis
14%
Growth Rate
14%
Controlled Growth
14%
Pressure-temperature
14%
High Surface Area
14%
Spectroscopic Studies
14%
Vibrational Spectroscopy
14%
Film Growth
14%
Laser-induced
14%
Stretching Vibration
14%
Substrate Temperature
14%
2H2O
14%
Auger Electron Spectroscopy
14%
Temperature Programmed Desorption
14%
Thermal Desorption
14%
Desorption Temperature
14%
Layer Control
14%
High-pressure Conditions
14%
Infrared Measurements
14%
Vacuum Environment
14%
SiO2 Deposition
14%
Asterisk
14%
Vacuum Chamber
14%
SiO2 Film
14%
SiO2 Thin Film
14%
Chlorine-free
14%
Oxidized Porous Silicon
14%
High-pressure Chamber
14%
Material Science
Desorption
100%
Surface (Surface Science)
100%
Auger Electron Spectroscopy
50%
Surface Analysis
50%
Film
50%
Film Growth
50%
Thin Films
50%
Porous Silicon
50%
Engineering
Atomic Layer
100%
Reaction Sequence
100%
Silicon Dioxide
100%
Reactant
22%
Fourier Transform
22%
Programmed Temperature
11%
Torr
11%
Substrate Temperature
11%
High Surface Area
11%
High Pressure Conditions
11%
Sio2 Film
11%
Free Chlorine
11%
Illustrates
11%
Thin Films
11%
Porous Silicon
11%
Chemical Engineering
Film
100%
Temperature Programmed Desorption
33%
Thermal Desorption
33%
Desorption Temperature
33%