Atomic layer growth of SiO 2 on Si(100) using the sequential deposition of SiCl 4 and H 2 O

Ofer Sneh*, Michael L. Wise, Lynne A. Okada, Andrew W. Ott, Steven M. George

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study explored the surface chemistry and the promise of the binary reaction scheme: (A) Si-OH + SiCl 4 → Si-Cl + HCl (B) Si-Cl + H 2 O → Si-OH + HCl for controlled SiO 2 film deposition. In this binary ABAB... sequence, each surface reaction may be self-terminating and ABAB... repetitive cycles may produce layer-by-layer controlled deposition. Using this approach, the growth of SiO 2 thin films on Si(100) with atomic layer control was achieved at 600 K with pressures in the 1 to 50 Torr range. The experiments were performed in a small high pressure cell situated in a UHV chamber. This design couples CVD conditions for film growth with a UHV environment for surface analysis using laser-induced thermal desorption (LITD), temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). The controlled layer-by-layer deposition of SiO 2 on Si(100) was demonstrated and optimized using these techniques. A stoichiometric and chlorine-free SiO 2 film was also produced as revealed by TPD and AES analysis. SiO 2 growth rates of approximately 1 ML of oxygen per AB cycle were obtained at 600 K. These studies demonstrate the methodology of using the combined UHV/high pressure experimental apparatus for optimizing a binary reaction CVD process.

Original languageEnglish (US)
Title of host publicationGas-Phase and Surface Chemistry in Electronic Materials Processing
PublisherPubl by Materials Research Society
Pages25-30
Number of pages6
ISBN (Print)1558992332
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume334
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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