Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions

M. C. Hersam; N. P. Guisinger; J. W. Lyding; D. S. Thompson; J. S. Moore

doi:10.1063/1.1348322

Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions

M. C. Hersam^*, N. P. Guisinger, J. W. Lyding, D. S. Thompson, J. S. Moore

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The in situ hydrogen-passivated Si(100)-2X1 surface is characterized with x-ray photoelectron spectroscopy (XPS) and ultra-high-vacuum scanning tunneling microscopy (STM) following exposure to ambient conditions. The XPS measurements illustrate the chemical inertness of this surface as the onset of oxidation is not observed for the first 40 h of ambient exposure. After 15 min of contact with atmospheric conditions, the STM images reveal that the Si(100)-2X1:H surface remains atomically pristine. This exceptional stability is of relevance to a wide variety of applications that require ultrapure Si(100) substrates (e.g., microelectronics, semiconductor processing, nanofabrication, etc.).

Original language	English (US)
Pages (from-to)	886-888
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	7
DOIs	https://doi.org/10.1063/1.1348322
State	Published - Feb 12 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1348322

Cite this

@article{d043023b106746ad8d016e928f1a1def,

title = "Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions",

abstract = "The in situ hydrogen-passivated Si(100)-2X1 surface is characterized with x-ray photoelectron spectroscopy (XPS) and ultra-high-vacuum scanning tunneling microscopy (STM) following exposure to ambient conditions. The XPS measurements illustrate the chemical inertness of this surface as the onset of oxidation is not observed for the first 40 h of ambient exposure. After 15 min of contact with atmospheric conditions, the STM images reveal that the Si(100)-2X1:H surface remains atomically pristine. This exceptional stability is of relevance to a wide variety of applications that require ultrapure Si(100) substrates (e.g., microelectronics, semiconductor processing, nanofabrication, etc.).",

author = "Hersam, {M. C.} and Guisinger, {N. P.} and Lyding, {J. W.} and Thompson, {D. S.} and Moore, {J. S.}",

year = "2001",

month = feb,

day = "12",

doi = "10.1063/1.1348322",

language = "English (US)",

volume = "78",

pages = "886--888",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions

AU - Hersam, M. C.

AU - Guisinger, N. P.

AU - Lyding, J. W.

AU - Thompson, D. S.

AU - Moore, J. S.

PY - 2001/2/12

Y1 - 2001/2/12

N2 - The in situ hydrogen-passivated Si(100)-2X1 surface is characterized with x-ray photoelectron spectroscopy (XPS) and ultra-high-vacuum scanning tunneling microscopy (STM) following exposure to ambient conditions. The XPS measurements illustrate the chemical inertness of this surface as the onset of oxidation is not observed for the first 40 h of ambient exposure. After 15 min of contact with atmospheric conditions, the STM images reveal that the Si(100)-2X1:H surface remains atomically pristine. This exceptional stability is of relevance to a wide variety of applications that require ultrapure Si(100) substrates (e.g., microelectronics, semiconductor processing, nanofabrication, etc.).

AB - The in situ hydrogen-passivated Si(100)-2X1 surface is characterized with x-ray photoelectron spectroscopy (XPS) and ultra-high-vacuum scanning tunneling microscopy (STM) following exposure to ambient conditions. The XPS measurements illustrate the chemical inertness of this surface as the onset of oxidation is not observed for the first 40 h of ambient exposure. After 15 min of contact with atmospheric conditions, the STM images reveal that the Si(100)-2X1:H surface remains atomically pristine. This exceptional stability is of relevance to a wide variety of applications that require ultrapure Si(100) substrates (e.g., microelectronics, semiconductor processing, nanofabrication, etc.).

UR - http://www.scopus.com/inward/record.url?scp=0008330122&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0008330122&partnerID=8YFLogxK

U2 - 10.1063/1.1348322

DO - 10.1063/1.1348322

M3 - Article

AN - SCOPUS:0008330122

SN - 0003-6951

VL - 78

SP - 886

EP - 888

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this