Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides

Khang Hoang; S. D. Mahanti; James R. Salvador; Mercouri G. Kanatzidis

doi:10.1103/PhysRevLett.99.156403

Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides

Khang Hoang^*, S. D. Mahanti, James R. Salvador, Mercouri G. Kanatzidis

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

106 Scopus citations

Abstract

Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.

Original language	English (US)
Article number	156403
Journal	Physical review letters
Volume	99
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevLett.99.156403
State	Published - Oct 9 2007

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.",

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Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides

Abstract

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