Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides

Khang Hoang*, S. D. Mahanti, James R. Salvador, Mercouri G. Kanatzidis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

95 Scopus citations

Abstract

Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.

Original languageEnglish (US)
Article number156403
JournalPhysical review letters
Volume99
Issue number15
DOIs
StatePublished - Oct 9 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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