X-ray standing wave measurements were used to study the strain in one monolayer of pseudobinary alloy InxGa1-xAs buried in GaAs(001) by molecular-beam epitaxy. The measured In position along the  direction exhibited a nearly linear dependence on the In concentration x, thus supporting the validity of macroscopic continuum elasticity theory at the one-monolayer limit. A random-cluster calculation using a valence force field was performed to explain microscopically the origin of the vertical expansion of the strained monolayer observed by the experiment. The calculated As-In-As bond angle and the positions of the first-nearest-neighbor As atoms of In suggest that the nearly linear dependence of the In height on the alloy composition is a combined result of the As-In-As bond bending and the local lattice distortion at the GaAs/InxzGa1-xAs interface. The calculated In-As and Ga-As bond lengths were found to depend weakly on the In concentration, consistent with an earlier calculation for the case of a thick InxGa1-xAs film on GaAs(001) and the available x-ray absorption fine-structure data.
|Original language||English (US)|
|Number of pages||7|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics