Atomic scale chemistry of α2/γ interfaces in a multi-component TiAl alloy

Stephan S.A. Gerstl*, Young Won Kim, David N. Seidman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We report on the distribution of micro-alloying elements in a multi-component TiAl-based alloy. The specimen contains 3 at.% Nb, 1.5 at.% Cr, 0.5 at.% Mn, 0.6 at.% (W + Hf + Zr), and 0.2 at.% each of B, C, and O. The distributions of all micro-alloying elements with respect to the heterophase interface between α2 and γ lamellae are analyzed with a three-dimensional atom-probe (3DAP) microscope. All the elements partition except boron, which resides primarily in boride precipitates. Oxygen, C, Mn, and Cr partition to the α2-phase, whereas Nb and Zr partition to the γ-phase. Both W and Hf exhibit excess concentration values within ca. 7 nm of the lamellar interface in the α2-phase, and their near interfacial excesses are 0.26 and 0.35 atoms nm-2, respectively.

Original languageEnglish (US)
Pages (from-to)303-310
Number of pages8
JournalInterface Science
Volume12
Issue number2-3
DOIs
StatePublished - Apr 1 2004

Keywords

  • Interface
  • Interfacial excess
  • Partitioning
  • Proxigram
  • TiAl

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

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