Atomic scale observations of metal-induced gap states at interfaces

D. A. Muller, D. A. Shashkov, R. Benedek, L. H. Yang, J. Silcox, David N Seidman

Research output: Contribution to journalArticle

111 Scopus citations

Abstract

MgO/Cu interfaces produced by internal oxidation are studied by electron energy loss spectroscopy (EELS) using an atomic sized electron beam. We determine interfacial chemistry of this interface with subnanometer spatial resolution and use EELS to measure directly the electronic states pertaining to the buried interface. O, K, and Cu L2,3 edges show the formation of metal-induced states within the band gap of MgO, at the interface (which we find to be O terminated). Both experiment and ab initio calculations find the metal-induced gap states to be strongly localized at the interface, resulting in a very small interface core-level shift.

Original languageEnglish (US)
Pages (from-to)4741-4744
Number of pages4
JournalPhysical Review Letters
Volume80
Issue number21
DOIs
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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