Atomistic simulations of grain boundaries in CdTe

Fatih G. Sen, Christopher Buurma, Tadas Paulauskas, Ce Sun, Moon Kim, Sivalingam Sivananthan, Robert F. Klie, Maria K.Y. Chan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

An improvement in efficiencies of polycrystalline CdTe can possibly be achieved by understanding the role of grain boundaries. Therefore, we systematically studied the atomic and electronic structures of various high angle grain boundaries including asymmetric tilt and twist grain boundaries using empirical potentials and density functional theory (DFT). The density of states analysis revealed that most grain boundaries lead to the formation of midgap states, which can drastically reduce the photovoltaic efficiency. The planar-averaged electrostatic potential analysis indicated attraction for holes around the grain boundary region.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period6/14/156/19/15

Keywords

  • CdTe
  • density functional theory
  • grain boundaries

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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