Avalanche multiplication in AlGaN based solar-blind photodetectors

R. McClintock*, A. Yasan, K. Minder, P. Kung, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

104 Scopus citations


Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MVcm.

Original languageEnglish (US)
Article number241123
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number24
StatePublished - 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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