Avalanche multiplication in AlGaN based solar-blind photodetectors

R. McClintock; A. Yasan; K. Minder; P. Kung; M. Razeghi

doi:10.1063/1.2140610

Avalanche multiplication in AlGaN based solar-blind photodetectors

R. McClintock^*, A. Yasan, K. Minder, P. Kung, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

106 Scopus citations

Abstract

Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MVcm.

Original language	English (US)
Article number	241123
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	24
DOIs	https://doi.org/10.1063/1.2140610
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2140610

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title = "Avalanche multiplication in AlGaN based solar-blind photodetectors",

abstract = "Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MVcm.",

author = "R. McClintock and A. Yasan and K. Minder and P. Kung and M. Razeghi",

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doi = "10.1063/1.2140610",

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AU - McClintock, R.

AU - Yasan, A.

AU - Minder, K.

AU - Kung, P.

AU - Razeghi, M.

PY - 2005

Y1 - 2005

N2 - Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MVcm.

AB - Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MVcm.

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Avalanche multiplication in AlGaN based solar-blind photodetectors

Abstract

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