Back-illuminated separate absorption and multiplication GaN avalanche photodiodes

J. L. Pau, C. Bayram, R. McClintock, M. Razeghi, D. Silversmith

Research output: Contribution to journalArticlepeer-review

62 Scopus citations

Abstract

The performance of back-illuminated avalanche photodiodes with separate absorption and multiplication regions is presented. Devices with an active area of 225 μ m2 show a maximum multiplication gain of 41 200. The calculation of the noise equivalent power yields a minimum value of 3.3× 10-14 W Hz-12 at a gain of 3000, increasing to 2.0× 10-13 W Hz-12 at a gain of 41 200. The broadening of the response edge has been analyzed as a function of bias.

Original languageEnglish (US)
Article number101120
JournalApplied Physics Letters
Volume92
Issue number10
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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