Back-illuminated solar-blind photodetectors for imaging applications

Ryan P McClintock*, Alireza Yasan, Kathryn Mayes, Patrick Kung, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference article

7 Scopus citations

Abstract

Back-illuminated solar-blind ultraviolet p-i-n photodetectors and focal plane arrays are investigated. We initially study single-pixel devices and then discuss the hybridization to a read-out integrated circuit to form focal plane arrays for solar-blind UV imaging. The photodetectors consist of an AlGaN p-i-n active region grown atop a high quality AlN template layer with a -1 μm thick Al0.5Ga0.5NiSi-In co-doped low-resistance UV-transparent lateral conduction layer. The material is processed into a 320 × 256 array of 25 μm × 25 μm pixels using standard lithographic techniques. Typical pixels demonstrate a peak responsivity of 93 mA/W at 278 nm; this corresponds to an external quantum efficiency of 42%. The uniformity of the array is discussed, and a selection of sample images from the solar-blind focal plane array is included. In addition, recent attempts to achieve shorter wavelength deep UV back-illuminated p-i-n photodetector and focal plane arrays are also discussed.

Original languageEnglish (US)
Article number55
Pages (from-to)175-184
Number of pages10
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5732
DOIs
StatePublished - Jul 21 2005
EventQuantum Sensing and Nanophotonic Devices II - San Jose, CA, United States
Duration: Jan 23 2005Jan 27 2005

Keywords

  • AlGaN
  • Back-Illuminated
  • Detector
  • Focal Plane Array
  • Solar-Blind
  • Ultraviolet
  • p-i-n

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Biomaterials
  • Radiology Nuclear Medicine and imaging

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