Abstract
Back-illuminated solar-blind ultraviolet p-i-n photodetectors and focal plane arrays are investigated. We initially study single-pixel devices and then discuss the hybridization to a read-out integrated circuit to form focal plane arrays for solar-blind UV imaging. The photodetectors consist of an AlGaN p-i-n active region grown atop a high quality AlN template layer with a -1 μm thick Al0.5Ga0.5NiSi-In co-doped low-resistance UV-transparent lateral conduction layer. The material is processed into a 320 × 256 array of 25 μm × 25 μm pixels using standard lithographic techniques. Typical pixels demonstrate a peak responsivity of 93 mA/W at 278 nm; this corresponds to an external quantum efficiency of 42%. The uniformity of the array is discussed, and a selection of sample images from the solar-blind focal plane array is included. In addition, recent attempts to achieve shorter wavelength deep UV back-illuminated p-i-n photodetector and focal plane arrays are also discussed.
| Original language | English (US) |
|---|---|
| Article number | 55 |
| Pages (from-to) | 175-184 |
| Number of pages | 10 |
| Journal | Progress in Biomedical Optics and Imaging - Proceedings of SPIE |
| Volume | 5732 |
| DOIs | |
| State | Published - 2005 |
| Event | Quantum Sensing and Nanophotonic Devices II - San Jose, CA, United States Duration: Jan 23 2005 → Jan 27 2005 |
Keywords
- AlGaN
- Back-Illuminated
- Detector
- Focal Plane Array
- Solar-Blind
- Ultraviolet
- p-i-n
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Biomaterials
- Radiology Nuclear Medicine and imaging