Background deep-level defects in VPE GaP

Bruce W. Wessels

doi:10.1063/1.323848

Background deep-level defects in VPE GaP

Bruce W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Residual deep-level defects in vapor-phase epitaxial GaP were determined by transient capacitance spectroscopy. The dominant trap in the temperature range studied occurs at E_c-0.44 eV and was present in concentrations of (0.1-1.6) ×10¹⁴ cm^-3. Two other traps were observed at the epitaxial-layer-substrate interface with energies of E_c-0.23 eV and E_v+0.51 eV. The capture cross section and concentration of these defects are also presented.

Original language	English (US)
Pages (from-to)	1656-1658
Number of pages	3
Journal	Journal of Applied Physics
Volume	48
Issue number	4
DOIs	https://doi.org/10.1063/1.323848
State	Published - 1977

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.323848

Cite this

@article{112693aa331247b081d8883158600316,

title = "Background deep-level defects in VPE GaP",

abstract = "Residual deep-level defects in vapor-phase epitaxial GaP were determined by transient capacitance spectroscopy. The dominant trap in the temperature range studied occurs at Ec-0.44 eV and was present in concentrations of (0.1-1.6) ×1014 cm-3. Two other traps were observed at the epitaxial-layer-substrate interface with energies of Ec-0.23 eV and Ev+0.51 eV. The capture cross section and concentration of these defects are also presented.",

author = "Wessels, {Bruce W.}",

year = "1977",

doi = "10.1063/1.323848",

language = "English (US)",

volume = "48",

pages = "1656--1658",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Background deep-level defects in VPE GaP

AU - Wessels, Bruce W.

PY - 1977

Y1 - 1977

N2 - Residual deep-level defects in vapor-phase epitaxial GaP were determined by transient capacitance spectroscopy. The dominant trap in the temperature range studied occurs at Ec-0.44 eV and was present in concentrations of (0.1-1.6) ×1014 cm-3. Two other traps were observed at the epitaxial-layer-substrate interface with energies of Ec-0.23 eV and Ev+0.51 eV. The capture cross section and concentration of these defects are also presented.

AB - Residual deep-level defects in vapor-phase epitaxial GaP were determined by transient capacitance spectroscopy. The dominant trap in the temperature range studied occurs at Ec-0.44 eV and was present in concentrations of (0.1-1.6) ×1014 cm-3. Two other traps were observed at the epitaxial-layer-substrate interface with energies of Ec-0.23 eV and Ev+0.51 eV. The capture cross section and concentration of these defects are also presented.

UR - http://www.scopus.com/inward/record.url?scp=0017482828&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017482828&partnerID=8YFLogxK

U2 - 10.1063/1.323848

DO - 10.1063/1.323848

M3 - Article

AN - SCOPUS:0017482828

SN - 0021-8979

VL - 48

SP - 1656

EP - 1658

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Background deep-level defects in VPE GaP

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this