Background deep-level defects in VPE GaP

Bruce W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Residual deep-level defects in vapor-phase epitaxial GaP were determined by transient capacitance spectroscopy. The dominant trap in the temperature range studied occurs at Ec-0.44 eV and was present in concentrations of (0.1-1.6) ×1014 cm-3. Two other traps were observed at the epitaxial-layer-substrate interface with energies of Ec-0.23 eV and Ev+0.51 eV. The capture cross section and concentration of these defects are also presented.

Original languageEnglish (US)
Pages (from-to)1656-1658
Number of pages3
JournalJournal of Applied Physics
Volume48
Issue number4
DOIs
StatePublished - Dec 1 1977

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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