Residual deep-level defects in vapor-phase epitaxial GaP were determined by transient capacitance spectroscopy. The dominant trap in the temperature range studied occurs at Ec-0.44 eV and was present in concentrations of (0.1-1.6) ×1014 cm-3. Two other traps were observed at the epitaxial-layer-substrate interface with energies of Ec-0.23 eV and Ev+0.51 eV. The capture cross section and concentration of these defects are also presented.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)