Background-limited long wavelength infrared InAs/InAs1−xSbx type-II superlattice-based photodetectors operating at 110 K

Abbas Haddadi, Arash Dehzangi, Sourav Adhikary, Romain Chevallier, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

We report the demonstration of high-performance long-wavelength infrared (LWIR) nBn photodetectors based on InAs/InAs1−xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of ∼10 μm at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664 Ω·cm2 and a dark current density of 8 × 10−5 A/cm2, under −80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 × 1011 cm·√Hz/W and a background-limited operating temperature of 110 K.

Original languageEnglish (US)
Article number035502
JournalAPL Materials
Volume5
Issue number3
DOIs
StatePublished - Mar 1 2017

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Fingerprint Dive into the research topics of 'Background-limited long wavelength infrared InAs/InAs<sub>1−x</sub>Sb<sub>x</sub> type-II superlattice-based photodetectors operating at 110 K'. Together they form a unique fingerprint.

  • Cite this