Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K

Binh Minh Nguyen*, Darin Hoffman, Edward Kwei Wei Huang, Pierre Yves Delaunay, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

88 Scopus citations

Abstract

The utilization of the P+ -π -M- N+ photodiode architecture in conjunction with a thick active region can significantly improve long wavelength infrared type-II InAs/GaSb superlattice photodiodes. By studying the effect of the depletion region placement on the quantum efficiency in a thick structure, we achieved a topside illuminated quantum efficiency of 50% for an N -on- P diode at 8.0 μm at 77 K. Both the double heterostructure design and the application of polyimide passivation greatly reduce the surface leakage, giving an R0A of 416 Ω cm2 for a 1% cutoff wavelength of 10.52 μm, a Shot-Johnson detectivity of 8.1× 10 11 cm Hz /W at 77 K, and a background limited operating temperature of 110 K with 300 K background.

Original languageEnglish (US)
Article number123502
JournalApplied Physics Letters
Volume93
Issue number12
DOIs
StatePublished - Oct 8 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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