Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As 0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)