Background limited performance in p-doped GaAs/Ga0.71In 0.29As0.39P0.61 quantum well infrared photodetectors

J. Hoff*, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, M. Razeghi, G. J. Brown

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As 0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile.

Original languageEnglish (US)
Pages (from-to)22
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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