Background limited performance in p-doped GaAs/Ga0.71In 0.29As0.39P0.61 quantum well infrared photodetectors

J. Hoff; S. Kim; M. Erdtmann; R. Williams; J. Piotrowski; E. Bigan; M. Razeghi; G. J. Brown

doi:10.1063/1.115479

Background limited performance in p-doped GaAs/Ga_0.71In _0.29As_0.39P_0.61 quantum well infrared photodetectors

J. Hoff^*, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, M. Razeghi, G. J. Brown

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga_0.71In_0.29As _0.39P_0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile.

Original language	English (US)
Pages (from-to)	22
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115479
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.115479

Cite this

@article{7ed46ad3719b4eeeb4f53d9bd5a69a7d,

title = "Background limited performance in p-doped GaAs/Ga0.71In 0.29As0.39P0.61 quantum well infrared photodetectors",

abstract = "Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As 0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile.",

author = "J. Hoff and S. Kim and M. Erdtmann and R. Williams and J. Piotrowski and E. Bigan and M. Razeghi and Brown, {G. J.}",

year = "1995",

doi = "10.1063/1.115479",

language = "English (US)",

volume = "67",

pages = "22",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Background limited performance in p-doped GaAs/Ga0.71In 0.29As0.39P0.61 quantum well infrared photodetectors

AU - Hoff, J.

AU - Kim, S.

AU - Erdtmann, M.

AU - Williams, R.

AU - Piotrowski, J.

AU - Bigan, E.

AU - Razeghi, M.

AU - Brown, G. J.

PY - 1995

Y1 - 1995

N2 - Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As 0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile.

AB - Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As 0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile.

UR - http://www.scopus.com/inward/record.url?scp=0029634493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029634493&partnerID=8YFLogxK

U2 - 10.1063/1.115479

DO - 10.1063/1.115479

M3 - Article

AN - SCOPUS:0029634493

SN - 0003-6951

VL - 67

SP - 22

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -