Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices

Pierre Yves Delaunay*, Binh Minh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Paritosh Manurkar, Simeon Bogdanov, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

Recent advances in the design and fabrication of Type-II InAs/GaSb superlattices allowed the realization of high performance long wavelength infrared focal plane arrays. The introduction of an M-structure barrier between the n-type contact and the π active region reduced the tunneling component of the dark current. The M-structure design improved the noise performance and the dynamic range of FPAs at low temperatures. At 8IK, the NEDT of the focal plane array was 23 mK. The noise of the camera was dominated by the noise component due to the read out integrated circuit. At 8 μm, the median quantum efficiency of the detectors was 71%, mainly limited by the reflections on the backside of the array.

Original languageEnglish (US)
Article number72220W
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7222
DOIs
StatePublished - Mar 23 2009
EventQuantum Sensing and Nanophotonic Devices VI - San Jose, CA, United States
Duration: Jan 25 2009Jan 28 2009

Keywords

  • Focal plane array
  • GaSb
  • InAs
  • Infrared
  • LWIR
  • Type-II

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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