Band edge tunability of M -structure for heterojunction design in Sb based type II superlattice photodiodes

Binh Minh Nguyen; Darin Hoffman; Pierre Yves Delaunay; Edward Kwei Wei Huang; Manijeh Razeghi; Joe Pellegrino

doi:10.1063/1.3005196

Band edge tunability of M -structure for heterojunction design in Sb based type II superlattice photodiodes

Binh Minh Nguyen^*, Darin Hoffman, Pierre Yves Delaunay, Edward Kwei Wei Huang, Manijeh Razeghi, Joe Pellegrino

^*Corresponding author for this work

Electrical and Computer Engineering

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Abstract

We present theoretically and experimentally the effect of the band discontinuity in type II misaligned InAsGaSb superlattice heterodiodes. Calculations using the empirical tight binding method have shown the great flexibility in tuning the energy levels of the band edge in M -structure superlattice as compared to the standard InAsGaSb superlattice. Through the experimental realization of several p-π -M-n photodiodes, the band discontinuity alignment between the standard binary-binary superlattice and the M -structured superlattice was investigated via optical characterization. The agreement between the theoretical predictions and the experimental measurement confirms the capability of controlling the M -structure band edges and suggests a way to exploit this advantage for the realization of heterostructures containing an M -structured superlattice without bias dependent operation.

Original language	English (US)
Article number	163502
Journal	Applied Physics Letters
Volume	93
Issue number	16
DOIs	https://doi.org/10.1063/1.3005196
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Band edge tunability of M -structure for heterojunction design in Sb based type II superlattice photodiodes",

abstract = "We present theoretically and experimentally the effect of the band discontinuity in type II misaligned InAsGaSb superlattice heterodiodes. Calculations using the empirical tight binding method have shown the great flexibility in tuning the energy levels of the band edge in M -structure superlattice as compared to the standard InAsGaSb superlattice. Through the experimental realization of several p-π -M-n photodiodes, the band discontinuity alignment between the standard binary-binary superlattice and the M -structured superlattice was investigated via optical characterization. The agreement between the theoretical predictions and the experimental measurement confirms the capability of controlling the M -structure band edges and suggests a way to exploit this advantage for the realization of heterostructures containing an M -structured superlattice without bias dependent operation.",

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T1 - Band edge tunability of M -structure for heterojunction design in Sb based type II superlattice photodiodes

AU - Nguyen, Binh Minh

AU - Hoffman, Darin

AU - Delaunay, Pierre Yves

AU - Huang, Edward Kwei Wei

AU - Razeghi, Manijeh

AU - Pellegrino, Joe

PY - 2008

Y1 - 2008

N2 - We present theoretically and experimentally the effect of the band discontinuity in type II misaligned InAsGaSb superlattice heterodiodes. Calculations using the empirical tight binding method have shown the great flexibility in tuning the energy levels of the band edge in M -structure superlattice as compared to the standard InAsGaSb superlattice. Through the experimental realization of several p-π -M-n photodiodes, the band discontinuity alignment between the standard binary-binary superlattice and the M -structured superlattice was investigated via optical characterization. The agreement between the theoretical predictions and the experimental measurement confirms the capability of controlling the M -structure band edges and suggests a way to exploit this advantage for the realization of heterostructures containing an M -structured superlattice without bias dependent operation.

AB - We present theoretically and experimentally the effect of the band discontinuity in type II misaligned InAsGaSb superlattice heterodiodes. Calculations using the empirical tight binding method have shown the great flexibility in tuning the energy levels of the band edge in M -structure superlattice as compared to the standard InAsGaSb superlattice. Through the experimental realization of several p-π -M-n photodiodes, the band discontinuity alignment between the standard binary-binary superlattice and the M -structured superlattice was investigated via optical characterization. The agreement between the theoretical predictions and the experimental measurement confirms the capability of controlling the M -structure band edges and suggests a way to exploit this advantage for the realization of heterostructures containing an M -structured superlattice without bias dependent operation.

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Band edge tunability of M -structure for heterojunction design in Sb based type II superlattice photodiodes

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