We present theoretically and experimentally the effect of the band discontinuity in type II misaligned InAsGaSb superlattice heterodiodes. Calculations using the empirical tight binding method have shown the great flexibility in tuning the energy levels of the band edge in M -structure superlattice as compared to the standard InAsGaSb superlattice. Through the experimental realization of several p-π -M-n photodiodes, the band discontinuity alignment between the standard binary-binary superlattice and the M -structured superlattice was investigated via optical characterization. The agreement between the theoretical predictions and the experimental measurement confirms the capability of controlling the M -structure band edges and suggests a way to exploit this advantage for the realization of heterostructures containing an M -structured superlattice without bias dependent operation.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)