@article{007ce4edf87f4433b65f794e1c06b7f8,
title = "Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides",
keywords = "2D materials, band engineering, van der Waals epitaxy",
author = "Hui Cai and Emmanuel Soignard and Can Ataca and Bin Chen and Changhyun Ko and Toshihiro Aoki and Anupum Pant and Xiuqing Meng and Shengxue Yang and Jeffrey Grossman and Ogletree, {Frank D.} and Sefaattin Tongay",
note = "Funding Information: This work was supported by the Arizona State University seeding program. The authors thank Kedi Wu and Cong Wang for useful discussions. The authors gratefully acknowledge the use of facilities at the LeRoy Eyring Center for Solid State Science at Arizona State University. The authors acknowledge the use of John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. SEM and EDS experiments at the Molecular Foundry were supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. S.T. acknowledges funding from NSF DMR-1552220 and CMMI-1561839.",
year = "2016",
month = sep,
doi = "10.1002/adma.201601184",
language = "English (US)",
volume = "28",
pages = "7375--7382",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-Blackwell",
number = "34",
}