Band-gap narrowing and potential fluctuation in Si-doped GaN

In Hwan Lee*, J. J. Lee, P. Kung, F. J. Sanchez, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

87 Scopus citations


We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.

Original languageEnglish (US)
Pages (from-to)102-104
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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