Band-gap narrowing and potential fluctuation in Si-doped GaN

In Hwan Lee; J. J. Lee; P. Kung; F. J. Sanchez; M. Razeghi

doi:10.1063/1.122964

Band-gap narrowing and potential fluctuation in Si-doped GaN

In Hwan Lee^*, J. J. Lee, P. Kung, F. J. Sanchez, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

93 Scopus citations

Abstract

We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.

Original language	English (US)
Pages (from-to)	102-104
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	1
DOIs	https://doi.org/10.1063/1.122964
State	Published - 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.122964

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abstract = "We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.",

author = "Lee, {In Hwan} and Lee, {J. J.} and P. Kung and Sanchez, {F. J.} and M. Razeghi",

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journal = "Applied Physics Letters",

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T1 - Band-gap narrowing and potential fluctuation in Si-doped GaN

AU - Lee, In Hwan

AU - Lee, J. J.

AU - Kung, P.

AU - Sanchez, F. J.

AU - Razeghi, M.

PY - 1999

Y1 - 1999

N2 - We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.

AB - We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.

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JF - Applied Physics Letters

IS - 1

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Band-gap narrowing and potential fluctuation in Si-doped GaN

Abstract

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