Band-gap narrowing and potential fluctuation in Si-doped GaN

Keyphrases

• Photoluminescence 100%
• Band Broadening 100%
• Potential Fluctuations 100%
• Si-doped GaN 100%
• Optical Properties 50%
• Peak Position 50%
• Electron Concentration 50%
• Concentration Dependence 50%
• Photoluminescence Spectra 50%
• Band Gap Energy 50%
• GaN Epitaxial Layers 50%
• High Electron Density 50%
• Residual Impurities 50%
• Narrowing Effect 50%
• Degree of Compensation 50%
• Band Edge Potentials 50%

Engineering

• Band Gap 100%
• Band Gap Energy 50%
• Electron Concentration 50%
• Band Edge 50%
• Carrier Concentration 50%
• Epitaxial Film 50%

Material Science

• Photoluminescence 100%
• Carrier Concentration 33%
• Optical Property 33%
• Epitaxial Film 33%