Abstract
Current state-of-the art infrared photon detectors based on bulk semiconductors such as InSb or HgCdTe are now relatively mature and have almost attained the theoretical limit of performance. It means, however, that the technology can not be expected to demonstrate revolutionary improvements, in terms of device performances. In contrasts, low dimensional quantum systems such as superlattices, quantum wells, quantum dots, are still the development stage, yet have shown comparable performance to the bulk detector family. Especially for the Type II Antimony-based superlattices, recent years have seen significant improvements in material quality, structural design as well as fabrication techniques which lift the performance of Type II superlattice photodetectors to a new level. In this talk, we will discuss the advantages of Type II-superlattices, from the physical nature of the material to the practical realisms. We will demonstrate the flexibility in controlling the energy gap and their overall band alignment for the suppression of Auger recombination, as well as to create sophisticated hetero-designs.
Original language | English (US) |
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Pages (from-to) | 1207-1212 |
Number of pages | 6 |
Journal | Physics Procedia |
Volume | 3 |
Issue number | 2 |
DOIs | |
State | Published - Jan 31 2010 |
Event | 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan Duration: Jul 13 2009 → Jul 17 2009 |
Keywords
- Band structure
- GaSb
- InAs
- M-structure
- Type II superlattices
ASJC Scopus subject areas
- General Physics and Astronomy