Band-like electron transport in organic transistors and implication of the molecular structure for performance optimization

Nikolas A. Minder, Shimpei Ono, Zhihua Chen, Antonio Facchetti*, Alberto F. Morpurgo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

262 Scopus citations

Abstract

The Hall effect and an increase of field-effect mobility with decreasing temperature is observerd in n-channel single-crystal organic field-effect transistors (OFETs). A quantitative analysis of these findings, together with results on different p-channel transistors, indicate the importance of the semiconductor molecular polarizability and the structure of the charge transport layers in the crystal for the observation of band-like transport in OFETs.

Original languageEnglish (US)
Pages (from-to)503-508
Number of pages6
JournalAdvanced Materials
Volume24
Issue number4
DOIs
StatePublished - Jan 24 2012
Externally publishedYes

Keywords

  • Hall effect
  • band-like transport
  • field-effect transistor
  • n-type
  • organic single-crystal

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science

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