Abstract
The Hall effect and an increase of field-effect mobility with decreasing temperature is observerd in n-channel single-crystal organic field-effect transistors (OFETs). A quantitative analysis of these findings, together with results on different p-channel transistors, indicate the importance of the semiconductor molecular polarizability and the structure of the charge transport layers in the crystal for the observation of band-like transport in OFETs.
Original language | English (US) |
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Pages (from-to) | 503-508 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 24 |
Issue number | 4 |
DOIs | |
State | Published - Jan 24 2012 |
Externally published | Yes |
Keywords
- Hall effect
- band-like transport
- field-effect transistor
- n-type
- organic single-crystal
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science