Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

366 Scopus citations

Abstract

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

Original languageEnglish (US)
Article number173107
JournalApplied Physics Letters
Volume102
Issue number17
DOIs
StatePublished - Apr 29 2013

Funding

This research was supported by the Materials Research Science and Engineering Center (MRSEC) of Northwestern University (NSF DMR-1121262). The authors thank B. Myers for assistance with electron beam lithography. D.J.L. would like to thank the Indo-US Science and Technology Forum (IUSSTF) for a postdoctoral fellowship and Professor C. N. R. Rao for helpful discussions. J.E.J. acknowledges an IIN Postdoctoral Fellowship provided by the Northwestern University International Institute for Nanotechnology. This research made use of the NUANCE Center at Northwestern University, which is supported by NSF-NSEC, NSF-MRSEC, Keck Foundation, and the State of Illinois.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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