Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

349 Scopus citations


Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

Original languageEnglish (US)
Article number173107
JournalApplied Physics Letters
Issue number17
StatePublished - Apr 29 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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