Band structure observed in the current-voltage characteristics of SINININIS-type junctions

I. P. Nevirkovets*, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Band structure in the conductivity of 4-barrier Nb/Al-AlOx-Al-AlOx-Al-AlOx-Al-AlO x-Nb (SINININIS) tunnel junctions is observed at low temperatures. This structure is explained in terms of the interference of quasiparticle waves in a periodic barrier.

Original languageEnglish (US)
Pages (from-to)342-344
Number of pages3
JournalJETP Letters
Volume71
Issue number8
DOIs
StatePublished - Apr 25 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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