Bandgap closing at the screw dislocations of WS2 spirals

Xin Zhang, Kaige Hu*, Yifei Li, Guohua Wei, Nathaniel P. Stern, Min Pan, Xiao Li, Hong Luo, Lei Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) materials are emerging as one class of quantum materials holding novel optical and electronic properties. In particular, the bandgap tunability attractive for nanoelectronics technology have been observed up to 1.1 eV when applying dielectric screening or grain boundary engineering. Here we present the experimental observation of bandgap closing at the center of the screw dislocation-driven WS2 spiral pyramid by means of scanning tunneling spectroscopy, which is validated by first-principle calculations. The observed giant bandgap modulation is attributed to the presence of dangling bonds induced by the W-S broken and the enhanced localized stress in the core of the dislocation. Achieving this metallic state and the consequent vertical conducting channel presents a pathway to 3D-interconnected vdW heterostructure devices based on emergent semiconducting TMDCs.

Original languageEnglish (US)
JournalUnknown Journal
StatePublished - Jun 17 2019

ASJC Scopus subject areas

  • General

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