Barrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wells

U. Cebulla*, A. Forchel, G. Bacher, D. Grützmacher, W. T. Tsang, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We have investigated the influence of the barrier thickness on hot carrier cooling in In0.53Ga0.47As/InP quantum wells by picosecond time resolved spectroscopy. Striking differences of the cooling of hot electrons and holes are observed for different barrier thicknesses. For small barrier thicknesses the initial carrier temperatures are significantly higher than for large barrier thicknesses. We can explain this behaviour by microscopic calculations of the transient variation of the carrier densities and the thermalization of hot carriers in the quantum well.

Original languageEnglish (US)
Pages (from-to)1669-1673
Number of pages5
JournalSolid State Electronics
Volume32
Issue number12
DOIs
StatePublished - Dec 1989

Keywords

  • Hot carrier cooling
  • InGaAs/InP quantum wells
  • barrier layers
  • psec spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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