Barrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wells

U. Cebulla; A. Forchel; G. Bacher; D. Grützmacher; W. T. Tsang; M. Razeghi

doi:10.1016/0038-1101(89)90292-X

Barrier controlled hot carrier cooling in In_0.53Ga_0.47As/InP quantum wells

U. Cebulla^*, A. Forchel, G. Bacher, D. Grützmacher, W. T. Tsang, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have investigated the influence of the barrier thickness on hot carrier cooling in In_0.53Ga_0.47As/InP quantum wells by picosecond time resolved spectroscopy. Striking differences of the cooling of hot electrons and holes are observed for different barrier thicknesses. For small barrier thicknesses the initial carrier temperatures are significantly higher than for large barrier thicknesses. We can explain this behaviour by microscopic calculations of the transient variation of the carrier densities and the thermalization of hot carriers in the quantum well.

Original language	English (US)
Pages (from-to)	1669-1673
Number of pages	5
Journal	Solid State Electronics
Volume	32
Issue number	12
DOIs	https://doi.org/10.1016/0038-1101(89)90292-X
State	Published - Dec 1989

Keywords

Hot carrier cooling
InGaAs/InP quantum wells
barrier layers
psec spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/0038-1101(89)90292-X

Cite this

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title = "Barrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wells",

abstract = "We have investigated the influence of the barrier thickness on hot carrier cooling in In0.53Ga0.47As/InP quantum wells by picosecond time resolved spectroscopy. Striking differences of the cooling of hot electrons and holes are observed for different barrier thicknesses. For small barrier thicknesses the initial carrier temperatures are significantly higher than for large barrier thicknesses. We can explain this behaviour by microscopic calculations of the transient variation of the carrier densities and the thermalization of hot carriers in the quantum well.",

keywords = "Hot carrier cooling, InGaAs/InP quantum wells, barrier layers, psec spectroscopy",

author = "U. Cebulla and A. Forchel and G. Bacher and D. Gr{\"u}tzmacher and Tsang, {W. T.} and M. Razeghi",

year = "1989",

month = dec,

doi = "10.1016/0038-1101(89)90292-X",

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journal = "Solid State Electronics",

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T1 - Barrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wells

AU - Cebulla, U.

AU - Forchel, A.

AU - Bacher, G.

AU - Grützmacher, D.

AU - Tsang, W. T.

AU - Razeghi, M.

PY - 1989/12

Y1 - 1989/12

N2 - We have investigated the influence of the barrier thickness on hot carrier cooling in In0.53Ga0.47As/InP quantum wells by picosecond time resolved spectroscopy. Striking differences of the cooling of hot electrons and holes are observed for different barrier thicknesses. For small barrier thicknesses the initial carrier temperatures are significantly higher than for large barrier thicknesses. We can explain this behaviour by microscopic calculations of the transient variation of the carrier densities and the thermalization of hot carriers in the quantum well.

AB - We have investigated the influence of the barrier thickness on hot carrier cooling in In0.53Ga0.47As/InP quantum wells by picosecond time resolved spectroscopy. Striking differences of the cooling of hot electrons and holes are observed for different barrier thicknesses. For small barrier thicknesses the initial carrier temperatures are significantly higher than for large barrier thicknesses. We can explain this behaviour by microscopic calculations of the transient variation of the carrier densities and the thermalization of hot carriers in the quantum well.

KW - Hot carrier cooling

KW - InGaAs/InP quantum wells

KW - barrier layers

KW - psec spectroscopy

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