Barrier-controlled thermalization in In0.53Ga0.47As/InP quantum wells

U. Cebulla*, A. Forchel, G. Bacher, D. Grützmacher, W. T. Tsang, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have studied the influence of the barrier thickness on hot-carrier cooling in Nd-YAG (yttrium aluminum garnet) laser-excited In0.53Ga0.47As/InP quantum wells by picosecond-time-resolved spectroscopy. The experiments yield striking differences of the transient carrier temperatures for different barrier thicknesses. For small barrier thicknesses we observe initial carrier temperatures up to 500 K, whereas for large barrier thicknesses the carrier temperatures stay below 120 K. The experimental data can be explained by microscopic calculations of the transient variation of the carrier densities and the thermalization of hot carriers in the quantum well.

Original languageEnglish (US)
Pages (from-to)10009-10012
Number of pages4
JournalPhysical Review B
Volume40
Issue number14
DOIs
StatePublished - 1989

ASJC Scopus subject areas

  • Condensed Matter Physics

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