Barrier height modulation and dipole moments in metal-molecule-silicon diodes

Adina Scott; Chad Risko; Mark A. Ratner; David B. Janes

doi:10.1109/ISDRS.2007.4422248

Barrier height modulation and dipole moments in metal-molecule-silicon diodes

Adina Scott^*, Chad Risko, Mark A. Ratner, David B. Janes

^*Corresponding author for this work

Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422248
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: Dec 12 2007 → Dec 14 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 12/14/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2007.4422248

Cite this

@inproceedings{8842a6b3a1e84319a98260b562577c65,

title = "Barrier height modulation and dipole moments in metal-molecule-silicon diodes",

author = "Adina Scott and Chad Risko and Ratner, {Mark A.} and Janes, {David B.}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422248",

language = "English (US)",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Scott, A, Risko, C, Ratner, MA & Janes, DB 2007, Barrier height modulation and dipole moments in metal-molecule-silicon diodes. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422248, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422248

TY - GEN

T1 - Barrier height modulation and dipole moments in metal-molecule-silicon diodes

AU - Scott, Adina

AU - Risko, Chad

AU - Ratner, Mark A.

AU - Janes, David B.

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949145466&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949145466&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422248

DO - 10.1109/ISDRS.2007.4422248

M3 - Conference contribution

AN - SCOPUS:44949145466

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Barrier height modulation and dipole moments in metal-molecule-silicon diodes

Publication series

Other

ASJC Scopus subject areas

Access to Document

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