Barrier heights at the SnO 2 /Pt interface: In situ photoemission and electrical properties

Christoph Körber*, Steven P. Harvey, Thomas O Mason, Andreas Klein

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


The SnO 2 /Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO 2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.

Original languageEnglish (US)
Pages (from-to)3246-3252
Number of pages7
JournalSurface Science
Issue number21
StatePublished - Nov 1 2008


  • Electrical transport measurement
  • Photoelectron spectroscopy
  • Platinum
  • Schottky barrier
  • Tin oxide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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