Barrier heights at the SnO
                        2
                        /Pt interface: In situ photoemission and electrical properties

Christoph Körber; Steven P. Harvey; Thomas O Mason; Andreas Klein

doi:10.1016/j.susc.2008.08.015

Barrier heights at the SnO ₂ /Pt interface: In situ photoemission and electrical properties

Christoph Körber^*, Steven P. Harvey, Thomas O Mason, Andreas Klein

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

The SnO ₂ /Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO ₂ film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.

Original language	English (US)
Pages (from-to)	3246-3252
Number of pages	7
Journal	Surface Science
Volume	602
Issue number	21
DOIs	https://doi.org/10.1016/j.susc.2008.08.015
State	Published - Nov 1 2008

Keywords

Electrical transport measurement
Photoelectron spectroscopy
Platinum
Schottky barrier
Tin oxide

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Barrier heights at the SnO 2 /Pt interface: In situ photoemission and electrical properties",

abstract = " The SnO 2 /Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO 2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.",

keywords = "Electrical transport measurement, Photoelectron spectroscopy, Platinum, Schottky barrier, Tin oxide",

author = "Christoph K{\"o}rber and Harvey, {Steven P.} and Mason, {Thomas O} and Andreas Klein",

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T2 - In situ photoemission and electrical properties

AU - Körber, Christoph

AU - Harvey, Steven P.

AU - Mason, Thomas O

AU - Klein, Andreas

PY - 2008/11/1

Y1 - 2008/11/1

N2 - The SnO 2 /Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO 2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.

AB - The SnO 2 /Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO 2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.

KW - Electrical transport measurement

KW - Photoelectron spectroscopy

KW - Platinum

KW - Schottky barrier

KW - Tin oxide

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