Ba4in8Sb16: Thermoelectric properties of a new layered zintl phase with infinite Zigzag Sb chains and pentagonal tubes

Mercouri G. Kanatzidis*

*Corresponding author for this work

Research output: Contribution to journalArticle

65 Scopus citations

Abstract

A new Zintl phase Ba4In8Sb16 was obtained from a direct element combination reaction of the elements in a sealed graphite tube at 700°C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 10.166(3) Å, b = 4.5239(14) Å, c = 19.495(6) Å, and Z = 1. Ba4In8Sb16 has a two-dimensional structure with thick corrugated (In8Sb16)8- layers separated by Ba2+ ions. In the layer, InSb4 tetrahedra are connected by sharing three corners and by bridging the fourth corner in such a manner that infinite pentagonal tubes are formed. The compound is a narrow band gap (∼ 0.10 eV) semiconductor and satisfies the classical Zintl rule. Band structure calculations confirm that the material is a semiconductor and indicate that it has optimized In-Sb bonding interactions. Polycrystalline ingots of Ba4In8Sb16 show room-temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba4In8Sb16 is about 1.7 W/m·K in the temperature range 150-300 K.

Original languageEnglish (US)
Pages (from-to)3154-3159
Number of pages6
JournalChemistry of Materials
Volume11
Issue number11
DOIs
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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