Abstract
The photoluminescent properties of epitaxial Er doped BaTiO3 films have been measured over the temperature range of 15–295 K. The characteristic Er” emission peak energy is centered at 0.800 eV and is nearly temperature independent. The integrated peak intensity at 295 K is comparable to the intensity at 15 K. The photoluminescence decay time is 6 msec, which is comparable to what is observed in other Er doped solids. The predicted laser gain is of the order of 10 cm1.
Original language | English (US) |
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Pages (from-to) | 25-31 |
Number of pages | 7 |
Journal | Integrated Ferroelectrics |
Volume | 7 |
Issue number | 1-4 |
DOIs | |
State | Published - Feb 1995 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry