Er-doped BaTiO3 thin films have been investigated as a candidate for an optically active waveguide medium. Epitaxial layers were prepared by metal-organic chemical vapor deposition at low pressure. The properties of the characteristic Er3+ luminescence transition at 0.8 eV have been investigated for epitaxial Er doped BaTiO3 thin films for various Er concentrations. The photoluminescent intensity was found to increase by a factor greater than 500 when the doping level was increased from 1 × 1020 cm-3 to 2.2 × 1021 cm-3, indicating that concentration quenching was not significant at the highest doping levels. A complex emission spectra was observed and was attributed to the multi-site substitution of Er in BaTiO3. Transient decay measurements revealed a 7 ms radiative lifetime for the 0.80 eV transition that was independent of concentration.
|Original language||English (US)|
|Number of pages||8|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 1996|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials