Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates

Yugang Sun; Seiyon Kim; Ilesanmi Adesida; John A. Rogers

doi:10.1063/1.2032609

Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates

Yugang Sun, Seiyon Kim, Ilesanmi Adesida, John A. Rogers

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

Micro/nanowires of GaAs with integrated ohmic contacts have been prepared from bulk wafers by metal deposition and patterning, high-temperature annealing, and anisotropic chemical etching. These wires provide a unique type of material for high-performance devices that can be built directly on a wide range of unusual device substrates, such as plastic or paper. In particular, transfer printing organized arrays of these wires at low temperatures onto plastic substrates yield high-quality bendable metal-semiconductor field-effect transistors. Electrical and mechanical characterization of devices on poly(ethylene terephthalate) illustrates the level of performance that can be achieved. These results indicate promise for this approach to high-speed flexible circuits for emerging applications in consumer and military electronic systems.

Original language	English (US)
Article number	083501
Journal	Applied Physics Letters
Volume	87
Issue number	8
DOIs	https://doi.org/10.1063/1.2032609
State	Published - Aug 22 2005

Funding

The work was partially supported by the Defense Advanced Projects Agency under Contract No. F8650-04-C-710 and by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. Devices were fabricated using the Microfabrication and Crystal Growth Facility in Frederick Seitz Materials Research Laboratory, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. The authors thank Vipan Kumar for help and useful discussion in device fabrication.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2032609

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title = "Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates",

abstract = "Micro/nanowires of GaAs with integrated ohmic contacts have been prepared from bulk wafers by metal deposition and patterning, high-temperature annealing, and anisotropic chemical etching. These wires provide a unique type of material for high-performance devices that can be built directly on a wide range of unusual device substrates, such as plastic or paper. In particular, transfer printing organized arrays of these wires at low temperatures onto plastic substrates yield high-quality bendable metal-semiconductor field-effect transistors. Electrical and mechanical characterization of devices on poly(ethylene terephthalate) illustrates the level of performance that can be achieved. These results indicate promise for this approach to high-speed flexible circuits for emerging applications in consumer and military electronic systems.",

author = "Yugang Sun and Seiyon Kim and Ilesanmi Adesida and Rogers, {John A.}",

note = "Funding Information: The work was partially supported by the Defense Advanced Projects Agency under Contract No. F8650-04-C-710 and by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. Devices were fabricated using the Microfabrication and Crystal Growth Facility in Frederick Seitz Materials Research Laboratory, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. The authors thank Vipan Kumar for help and useful discussion in device fabrication.",

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AU - Rogers, John A.

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N2 - Micro/nanowires of GaAs with integrated ohmic contacts have been prepared from bulk wafers by metal deposition and patterning, high-temperature annealing, and anisotropic chemical etching. These wires provide a unique type of material for high-performance devices that can be built directly on a wide range of unusual device substrates, such as plastic or paper. In particular, transfer printing organized arrays of these wires at low temperatures onto plastic substrates yield high-quality bendable metal-semiconductor field-effect transistors. Electrical and mechanical characterization of devices on poly(ethylene terephthalate) illustrates the level of performance that can be achieved. These results indicate promise for this approach to high-speed flexible circuits for emerging applications in consumer and military electronic systems.

AB - Micro/nanowires of GaAs with integrated ohmic contacts have been prepared from bulk wafers by metal deposition and patterning, high-temperature annealing, and anisotropic chemical etching. These wires provide a unique type of material for high-performance devices that can be built directly on a wide range of unusual device substrates, such as plastic or paper. In particular, transfer printing organized arrays of these wires at low temperatures onto plastic substrates yield high-quality bendable metal-semiconductor field-effect transistors. Electrical and mechanical characterization of devices on poly(ethylene terephthalate) illustrates the level of performance that can be achieved. These results indicate promise for this approach to high-speed flexible circuits for emerging applications in consumer and military electronic systems.

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Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates

Abstract

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