Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates

Keyphrases

• Gallium Arsenide 100%
• Plastic Substrate 100%
• Wire Array 100%
• MESFET 100%
• Performance Level 33%
• Electrical Characterization 33%
• Nanowires 33%
• Military 33%
• Low Temperature 33%
• Wafer 33%
• Mechanical Characterization 33%
• Transfer Printing 33%
• Metal Deposition 33%
• Electronic System 33%
• Material Type 33%
• Polyethylene Terephthalate 33%
• Ohmic Contact 33%
• High-speed Devices 33%
• Anisotropic Etching 33%
• High-temperature Annealing 33%
• Flexible Circuits 33%
• Metal Patterning 33%

Material Science

• Gallium Arsenide 100%
• Field Effect Transistors 100%
• Metal Deposition 33%
• Nanowires 33%
• Annealing 33%
• Mechanical Testing 33%
• Electronic Circuit 33%
• Polyethylene Terephthalate 33%