Bendable GaN high electron mobility transistors on plastic substrates

Keon Jae Lee, Matthew A. Meitl, Jong Hyun Ahn, John A. Rogers, Ralph G. Nuzzo*, Vipan Kumar, Ilesanmi Adesida

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

96 Scopus citations


A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaNGaN single crystalline microstructures-a so-called microstructured semiconductor ink-and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.

Original languageEnglish (US)
Article number124507
JournalJournal of Applied Physics
Issue number12
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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