TY - JOUR
T1 - Bendable single crystal silicon thin film transistors formed by printing on plastic substrates
AU - Menard, E.
AU - Nuzzo, R. G.
AU - Rogers, J. A.
N1 - Funding Information:
The work was partially supported by the Defense Advanced Projects Agency under Contract No. F8650-04-C-710 and by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. Devices were fabricated using the Frederick Seitz Materials Research Laboratory facilities and characterized in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. Scanning electron microscopy imaging and finite element modeling were carried out at the Beckman Institute.
PY - 2005/2/28
Y1 - 2005/2/28
N2 - Bendable, high performance single crystal silicon transistors have been formed on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing single silicon objects, which we refer to as microstructured silicon (μs-Si), are picked up, using a conformable rubber stamp, from the top surface of a wafer from which they are generated. The μs-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet. The efficiency of this method is demonstrated by the fabrication of an array of thin film transistors that exhibit excellent electrical properties: average device effective mobilities, evaluated in the linear regime, of ∼240 cm 2/V s, and threshold voltages near 0 V. Frontward and backward bending tests demonstrate the mechanical robustness and flexibility of the devices.
AB - Bendable, high performance single crystal silicon transistors have been formed on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing single silicon objects, which we refer to as microstructured silicon (μs-Si), are picked up, using a conformable rubber stamp, from the top surface of a wafer from which they are generated. The μs-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet. The efficiency of this method is demonstrated by the fabrication of an array of thin film transistors that exhibit excellent electrical properties: average device effective mobilities, evaluated in the linear regime, of ∼240 cm 2/V s, and threshold voltages near 0 V. Frontward and backward bending tests demonstrate the mechanical robustness and flexibility of the devices.
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U2 - 10.1063/1.1866637
DO - 10.1063/1.1866637
M3 - Article
AN - SCOPUS:21044450378
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
M1 - 093507
ER -