Beryllium compensation doping of InAsGaSb infrared superlattice photodiodes

Darin Hoffman; Binh Minh Nguyen; Pierre Yves Delaunay; Andrew Hood; Manijeh Razeghi; Joe Pellegrino

doi:10.1063/1.2795086

Beryllium compensation doping of InAsGaSb infrared superlattice photodiodes

Darin Hoffman^*, Binh Minh Nguyen, Pierre Yves Delaunay, Andrew Hood, Manijeh Razeghi, Joe Pellegrino

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

Capacitance-voltage measurements in conjunction with dark current measurements on InAsGaSb long wavelength infrared superlattice photodiodes grown by molecular-beam epitaxy on GaSb substrates are reported. By varying the beryllium concentration in the InAs layer of the active region, the residually n -type superlattice is compensated to become slightly p type. By adjusting the doping, the dominant dark current mechanism can be varied from diffusion to Zener tunneling. Minimization of the dark current leads to an increase of the zero-bias differential resistance from less than 4 to 32 cm2 for a 100% cutoff of 12.05 μm

Original language	English (US)
Article number	143507
Journal	Applied Physics Letters
Volume	91
Issue number	14
DOIs	https://doi.org/10.1063/1.2795086
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Capacitance-voltage measurements in conjunction with dark current measurements on InAsGaSb long wavelength infrared superlattice photodiodes grown by molecular-beam epitaxy on GaSb substrates are reported. By varying the beryllium concentration in the InAs layer of the active region, the residually n -type superlattice is compensated to become slightly p type. By adjusting the doping, the dominant dark current mechanism can be varied from diffusion to Zener tunneling. Minimization of the dark current leads to an increase of the zero-bias differential resistance from less than 4 to 32 cm2 for a 100% cutoff of 12.05 μm",

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AU - Hoffman, Darin

AU - Nguyen, Binh Minh

AU - Delaunay, Pierre Yves

AU - Hood, Andrew

AU - Razeghi, Manijeh

AU - Pellegrino, Joe

PY - 2007

Y1 - 2007

N2 - Capacitance-voltage measurements in conjunction with dark current measurements on InAsGaSb long wavelength infrared superlattice photodiodes grown by molecular-beam epitaxy on GaSb substrates are reported. By varying the beryllium concentration in the InAs layer of the active region, the residually n -type superlattice is compensated to become slightly p type. By adjusting the doping, the dominant dark current mechanism can be varied from diffusion to Zener tunneling. Minimization of the dark current leads to an increase of the zero-bias differential resistance from less than 4 to 32 cm2 for a 100% cutoff of 12.05 μm

AB - Capacitance-voltage measurements in conjunction with dark current measurements on InAsGaSb long wavelength infrared superlattice photodiodes grown by molecular-beam epitaxy on GaSb substrates are reported. By varying the beryllium concentration in the InAs layer of the active region, the residually n -type superlattice is compensated to become slightly p type. By adjusting the doping, the dominant dark current mechanism can be varied from diffusion to Zener tunneling. Minimization of the dark current leads to an increase of the zero-bias differential resistance from less than 4 to 32 cm2 for a 100% cutoff of 12.05 μm

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Beryllium compensation doping of InAsGaSb infrared superlattice photodiodes

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