Beryllium compensation doping of InAsGaSb infrared superlattice photodiodes

Darin Hoffman*, Binh Minh Nguyen, Pierre Yves Delaunay, Andrew Hood, Manijeh Razeghi, Joe Pellegrino

*Corresponding author for this work

Research output: Contribution to journalArticle

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Capacitance-voltage measurements in conjunction with dark current measurements on InAsGaSb long wavelength infrared superlattice photodiodes grown by molecular-beam epitaxy on GaSb substrates are reported. By varying the beryllium concentration in the InAs layer of the active region, the residually n -type superlattice is compensated to become slightly p type. By adjusting the doping, the dominant dark current mechanism can be varied from diffusion to Zener tunneling. Minimization of the dark current leads to an increase of the zero-bias differential resistance from less than 4 to 32 cm2 for a 100% cutoff of 12.05 μm

Original languageEnglish (US)
Article number143507
JournalApplied Physics Letters
Issue number14
StatePublished - Oct 11 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hoffman, D., Nguyen, B. M., Delaunay, P. Y., Hood, A., Razeghi, M., & Pellegrino, J. (2007). Beryllium compensation doping of InAsGaSb infrared superlattice photodiodes. Applied Physics Letters, 91(14), [143507].