Bi epitaxy on polar InSb(111) A/B faces

Sunglae Cho, Young Ho Um, Yunki Kim, George K.L. Wong*, John B Ketterson, Jung Il Hong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Bi thin films were grown on InSb(111)A/B substrates using molecular beam epitaxy (MBE). Evidence for growth fashions which directly depend on the atomic arrangements of the InSb(111) polar surfaces was obtained. The surface structure of Bi layers on polar surfaces was studied using RHEED. Bi on InSb(111)B showed a (1X1) surface structure. However, Bi on InSb(111)A showed a (2X2) structure below 16 Å, and a (1X1) structure thereafter. The streaked RHEED patterns of Bi with clear Kikuchi lines indicated layer-by-layer growth with a good epitaxial layer quality. High crystallinity and sharp interfaces were observed using XRD and TEM. No interfacial misfit dislocations were observed in the high resolution TEM images of the Bi layer over an area of 0.1 μm2.

Original languageEnglish (US)
Pages (from-to)1191-1194
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume20
Issue number4
DOIs
StatePublished - Jul 1 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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