Bi epitaxy on polar InSb(111) A/B faces

Sunglae Cho; Young Ho Um; Yunki Kim; George K.L. Wong; J. B. Ketterson; Jung Il Hong

doi:10.1116/1.1479735

Bi epitaxy on polar InSb(111) A/B faces

Sunglae Cho, Young Ho Um, Yunki Kim, George K.L. Wong^*, J. B. Ketterson, Jung Il Hong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Bi thin films were grown on InSb(111)A/B substrates using molecular beam epitaxy (MBE). Evidence for growth fashions which directly depend on the atomic arrangements of the InSb(111) polar surfaces was obtained. The surface structure of Bi layers on polar surfaces was studied using RHEED. Bi on InSb(111)B showed a (1X1) surface structure. However, Bi on InSb(111)A showed a (2X2) structure below 16 Å, and a (1X1) structure thereafter. The streaked RHEED patterns of Bi with clear Kikuchi lines indicated layer-by-layer growth with a good epitaxial layer quality. High crystallinity and sharp interfaces were observed using XRD and TEM. No interfacial misfit dislocations were observed in the high resolution TEM images of the Bi layer over an area of 0.1 μm².

Original language	English (US)
Pages (from-to)	1191-1194
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1479735
State	Published - Jul 2002

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Bi epitaxy on polar InSb(111) A/B faces",

abstract = "Bi thin films were grown on InSb(111)A/B substrates using molecular beam epitaxy (MBE). Evidence for growth fashions which directly depend on the atomic arrangements of the InSb(111) polar surfaces was obtained. The surface structure of Bi layers on polar surfaces was studied using RHEED. Bi on InSb(111)B showed a (1X1) surface structure. However, Bi on InSb(111)A showed a (2X2) structure below 16 {\AA}, and a (1X1) structure thereafter. The streaked RHEED patterns of Bi with clear Kikuchi lines indicated layer-by-layer growth with a good epitaxial layer quality. High crystallinity and sharp interfaces were observed using XRD and TEM. No interfacial misfit dislocations were observed in the high resolution TEM images of the Bi layer over an area of 0.1 μm2.",

author = "Sunglae Cho and Um, {Young Ho} and Yunki Kim and Wong, {George K.L.} and Ketterson, {J. B.} and Hong, {Jung Il}",

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T1 - Bi epitaxy on polar InSb(111) A/B faces

AU - Cho, Sunglae

AU - Um, Young Ho

AU - Kim, Yunki

AU - Wong, George K.L.

AU - Ketterson, J. B.

AU - Hong, Jung Il

PY - 2002/7

Y1 - 2002/7

N2 - Bi thin films were grown on InSb(111)A/B substrates using molecular beam epitaxy (MBE). Evidence for growth fashions which directly depend on the atomic arrangements of the InSb(111) polar surfaces was obtained. The surface structure of Bi layers on polar surfaces was studied using RHEED. Bi on InSb(111)B showed a (1X1) surface structure. However, Bi on InSb(111)A showed a (2X2) structure below 16 Å, and a (1X1) structure thereafter. The streaked RHEED patterns of Bi with clear Kikuchi lines indicated layer-by-layer growth with a good epitaxial layer quality. High crystallinity and sharp interfaces were observed using XRD and TEM. No interfacial misfit dislocations were observed in the high resolution TEM images of the Bi layer over an area of 0.1 μm2.

AB - Bi thin films were grown on InSb(111)A/B substrates using molecular beam epitaxy (MBE). Evidence for growth fashions which directly depend on the atomic arrangements of the InSb(111) polar surfaces was obtained. The surface structure of Bi layers on polar surfaces was studied using RHEED. Bi on InSb(111)B showed a (1X1) surface structure. However, Bi on InSb(111)A showed a (2X2) structure below 16 Å, and a (1X1) structure thereafter. The streaked RHEED patterns of Bi with clear Kikuchi lines indicated layer-by-layer growth with a good epitaxial layer quality. High crystallinity and sharp interfaces were observed using XRD and TEM. No interfacial misfit dislocations were observed in the high resolution TEM images of the Bi layer over an area of 0.1 μm2.

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Bi epitaxy on polar InSb(111) A/B faces

Abstract

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