Bi1-xSbx/Bi superlattice grown by molecular beam epitaxy

X. J. Yi*, H. C. Wang, A. Divenere, C. L. Hou, J. Chen, J. B. Ketterson, G. K. Wong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Superlattices of Bi1-xSbx/Bi have been grown by molecular beam epitaxy on CdTe(111) substrates. The typical multilayer, consisting of Bi1-xSbx (85 Å with x=0.16) and Bi (75-Å) layers repeated 50 times, was grown at a substrate temperature of 150°C. The samples were characterized by reflection high-energy electron diffraction (RHEED), θ-2θ x-ray diffraction analysis, and high-resolution transmission electron microscopy. The streaked RHEED patterns with clear Kikuchi lines and the x-ray satellite peaks indicate a good epitaxial layer quality. The bright field transmission electron microscopy image of the superlattice film confirms that a composition modulation exists, even though the Bi1-xSbx and Bi layers have only a slight image contrast.

Original languageEnglish (US)
Pages (from-to)1283-1285
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number10
DOIs
StatePublished - 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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