TY - JOUR
T1 -
Bi substitution effects on Sb
2
Te
3
thin films
AU - Kim, Yunki
AU - Cho, Sunglae
AU - DiVenere, Antonio
AU - Wong, George K.
AU - Ketterson, John B
AU - Meyer, Jerry R.
PY - 1999/12/1
Y1 - 1999/12/1
N2 -
We have investigated the structural and thermoelectric properties of (Sb
1-x
Bi
x
)
2
Te
3
MBE grown thin films on CdTe(111). Analysis of X-ray diffraction patterns (θ-2θ scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.l) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power of the films were performed with respect to the binary composition of Sb and Bi, x. For the samples in the range 0.2<x<0.3, the room temperature thermopower values are in the range 184-159 μV/K. Measurements of the temperature-dependent resistivity and Hall coefficient of the films were also performed. For the samples in the range 0.2<x<0.3, the room temperature carrier concentrations were 3.93-5.13×10
19
cm
-3
and the mobilities were 24.6-64.0 cm
2
V
-1
s
-1
.
AB -
We have investigated the structural and thermoelectric properties of (Sb
1-x
Bi
x
)
2
Te
3
MBE grown thin films on CdTe(111). Analysis of X-ray diffraction patterns (θ-2θ scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.l) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power of the films were performed with respect to the binary composition of Sb and Bi, x. For the samples in the range 0.2<x<0.3, the room temperature thermopower values are in the range 184-159 μV/K. Measurements of the temperature-dependent resistivity and Hall coefficient of the films were also performed. For the samples in the range 0.2<x<0.3, the room temperature carrier concentrations were 3.93-5.13×10
19
cm
-3
and the mobilities were 24.6-64.0 cm
2
V
-1
s
-1
.
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M3 - Conference article
AN - SCOPUS:0033299526
SP - 185
EP - 188
JO - International Conference on Thermoelectrics, ICT, Proceedings
JF - International Conference on Thermoelectrics, ICT, Proceedings
SN - 1094-2734
T2 - 18th International Conference on Thermoelectrics (ICT'99)
Y2 - 29 August 1999 through 2 September 1999
ER -