Bi substitution effects on Sb 2 Te 3 thin films

Yunki Kim*, Sunglae Cho, Antonio DiVenere, George K. Wong, John B Ketterson, Jerry R. Meyer

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

We have investigated the structural and thermoelectric properties of (Sb 1-x Bi x ) 2 Te 3 MBE grown thin films on CdTe(111). Analysis of X-ray diffraction patterns (θ-2θ scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.l) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power of the films were performed with respect to the binary composition of Sb and Bi, x. For the samples in the range 0.2<x<0.3, the room temperature thermopower values are in the range 184-159 μV/K. Measurements of the temperature-dependent resistivity and Hall coefficient of the films were also performed. For the samples in the range 0.2<x<0.3, the room temperature carrier concentrations were 3.93-5.13×10 19 cm -3 and the mobilities were 24.6-64.0 cm 2 V -1 s -1 .

Original languageEnglish (US)
Pages (from-to)185-188
Number of pages4
JournalInternational Conference on Thermoelectrics, ICT, Proceedings
StatePublished - Dec 1 1999
Event18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA
Duration: Aug 29 1999Sep 2 1999

ASJC Scopus subject areas

  • Engineering(all)

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