Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1-xSbx type-II superlattices

Abbas Haddadi, R. Chevallier, G. Chen, A. M. Hoang, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Abstract

A high performance bias-selectable mid-/long-wavelength infrared photodetector based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-wavelength channels' 50% cut-off wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-wavelength channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10-7 A/cm2 under 100 mV applied bias, the mid-wavelength channel exhibited a specific detectivity of 8.2 × 1012cm· Hz/W at 77 K. The long-wavelength channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10-4 A/cm2 under -150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 1011cm· Hz/W.

Original languageEnglish (US)
Article number011104
JournalApplied Physics Letters
Volume106
Issue number1
DOIs
StatePublished - Jan 5 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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