Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices

Abbas Haddadi, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A bias-selectable, high operating temperature, three-color short-, extended-short-, and mid-wavelength infrared photodetector based on InAs/GaSb/AlSb type-II superlattices on GaSb substrate has been demonstrated. The short-, extended-short-, and mid-wavelength channels’ 50% cutoff wavelengths were 2.3, 2.9, and 4.4 μm, respectively, at 150 K. The mid-wavelength channel exhibited a saturated quantum efficiency of 34% at 4 μm under 200 mV bias voltage in a front-side illumination configuration and without any antireflection coating. At 200 mV, the device exhibited a dark current density of 8.7 × 10−5 A∕cm2 providing a specific detectivity of ∼2 × 1011 cm · Hz1∕2∕W at 150 K. The short-wavelength channel achieved a saturated quantum efficiency of 20% at 1.8 μm. At −10 mV, the device’s dark current density was 5.5 × 10−8 A∕cm2. At zero bias, its specific detectivity was 1 × 1011 cm · Hz1∕2∕W at 150 K. The extended short-wavelength channel achieved a saturated quantum efficiency of 22% at 2.75 μm. Under −2 V bias voltage, the device exhibited a dark current density of 1.8 × 10−6 A∕cm2 providing a specific detectivity of 6.3 × 1011 cm · Hz1∕2∕W at 150 K.

Original languageEnglish (US)
Pages (from-to)4275-4278
Number of pages4
JournalOptics Letters
Volume42
Issue number21
DOIs
StatePublished - Nov 1 2017

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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