Biaxial strain in graphene adhered to shallow depressions

Constanze Metzger, Sebastian Rémi, Mengkun Liu, Silvia V. Kusminskiy, Antonio H. Castro Neto, Anna K. Swan, Bennett B. Goldberg

Research output: Contribution to journalArticlepeer-review

163 Scopus citations

Abstract

Measurements on graphene exfollated over a substrate prepatterned with shallow depressions demonstrate that graphene does not remain free-standing but instead adheres to the substrate despite the induced biaxial strain. The strain is homogeneous over the depression bottom as determined by Raman measurements. We find higher Raman shifts and Grüneisen parameters of the phonons underlying the G and 2D bands under biaxial strain than previously reported. Interference modeling is used to determine the vertical position of the graphene and to calculate the optimum dielectric substrate stack for maximum Raman signal.

Original languageEnglish (US)
Pages (from-to)6-10
Number of pages5
JournalNano letters
Volume10
Issue number1
DOIs
StatePublished - Jan 13 2010

Keywords

  • Biaxial
  • Graphene
  • Raman spectroscopy
  • Reflectivity
  • Strain

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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