Bipolar magnetic junction transistors for logic applications

B. W. Wessels*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

There has been widespread interest in the development of semiconductor spintronic devices for information processing and storage. While much of the research has been centered on the Datta-Das spin field effect transistor, it has not been realized. As an alternative approach, the bipolar magnetic junction transistor (MJT) has been proposed. Recently the bipolar MJT has been demonstrated using the dilute magnetic semiconductor InMnAs. The transistor operates at room temperature with a gain of the order of 20. Logic circuits have been proposed based on both magnetic semiconductor diodes and MJT devices.

Original languageEnglish (US)
Title of host publicationRare Earth and Transition Metal Doping of Semiconductor Materials
Subtitle of host publicationSynthesis, Magnetic Properties and Room Temperature Spintronics
PublisherElsevier Inc
Pages435-445
Number of pages11
ISBN (Electronic)9780081000601
ISBN (Print)9780081000410
DOIs
StatePublished - Feb 23 2016

Keywords

  • Bipolar magnetic junction transistor
  • Narrow gap semiconductors
  • Spin diodes

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Bipolar magnetic junction transistors for logic applications'. Together they form a unique fingerprint.

Cite this