Bipolar magnetic junction transistors for logic applications

B. W. Wessels

doi:10.1016/B978-0-08-100041-0.00013-5

Bipolar magnetic junction transistors for logic applications

B. W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

2 Scopus citations

Abstract

There has been widespread interest in the development of semiconductor spintronic devices for information processing and storage. While much of the research has been centered on the Datta-Das spin field effect transistor, it has not been realized. As an alternative approach, the bipolar magnetic junction transistor (MJT) has been proposed. Recently the bipolar MJT has been demonstrated using the dilute magnetic semiconductor InMnAs. The transistor operates at room temperature with a gain of the order of 20. Logic circuits have been proposed based on both magnetic semiconductor diodes and MJT devices.

Original language	English (US)
Title of host publication	Rare Earth and Transition Metal Doping of Semiconductor Materials
Subtitle of host publication	Synthesis, Magnetic Properties and Room Temperature Spintronics
Publisher	Elsevier Inc
Pages	435-445
Number of pages	11
ISBN (Electronic)	9780081000601
ISBN (Print)	9780081000410
DOIs	https://doi.org/10.1016/B978-0-08-100041-0.00013-5
State	Published - Feb 23 2016

Keywords

Bipolar magnetic junction transistor
Narrow gap semiconductors
Spin diodes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1016/B978-0-08-100041-0.00013-5

Cite this

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title = "Bipolar magnetic junction transistors for logic applications",

abstract = "There has been widespread interest in the development of semiconductor spintronic devices for information processing and storage. While much of the research has been centered on the Datta-Das spin field effect transistor, it has not been realized. As an alternative approach, the bipolar magnetic junction transistor (MJT) has been proposed. Recently the bipolar MJT has been demonstrated using the dilute magnetic semiconductor InMnAs. The transistor operates at room temperature with a gain of the order of 20. Logic circuits have been proposed based on both magnetic semiconductor diodes and MJT devices.",

keywords = "Bipolar magnetic junction transistor, Narrow gap semiconductors, Spin diodes",

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note = "Funding Information: This work is supported by the National Science Foundation (NSF) under grant #DMR-0804479 and DMR1305666. Extensive use of the facilities of the Materials Research Center at Northwestern University supported by the NSF (No. DMR 0076097) is acknowledged. Use of the Center for Nanoscale Materials at Argonne National Laboratory was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd. All rights reserved.",

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N1 - Funding Information: This work is supported by the National Science Foundation (NSF) under grant #DMR-0804479 and DMR1305666. Extensive use of the facilities of the Materials Research Center at Northwestern University supported by the NSF (No. DMR 0076097) is acknowledged. Use of the Center for Nanoscale Materials at Argonne National Laboratory was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. Publisher Copyright: © 2016 Elsevier Ltd. All rights reserved.

PY - 2016/2/23

Y1 - 2016/2/23

N2 - There has been widespread interest in the development of semiconductor spintronic devices for information processing and storage. While much of the research has been centered on the Datta-Das spin field effect transistor, it has not been realized. As an alternative approach, the bipolar magnetic junction transistor (MJT) has been proposed. Recently the bipolar MJT has been demonstrated using the dilute magnetic semiconductor InMnAs. The transistor operates at room temperature with a gain of the order of 20. Logic circuits have been proposed based on both magnetic semiconductor diodes and MJT devices.

AB - There has been widespread interest in the development of semiconductor spintronic devices for information processing and storage. While much of the research has been centered on the Datta-Das spin field effect transistor, it has not been realized. As an alternative approach, the bipolar magnetic junction transistor (MJT) has been proposed. Recently the bipolar MJT has been demonstrated using the dilute magnetic semiconductor InMnAs. The transistor operates at room temperature with a gain of the order of 20. Logic circuits have been proposed based on both magnetic semiconductor diodes and MJT devices.

KW - Bipolar magnetic junction transistor

KW - Narrow gap semiconductors

KW - Spin diodes

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BT - Rare Earth and Transition Metal Doping of Semiconductor Materials

PB - Elsevier Inc

ER -

Bipolar magnetic junction transistors for logic applications

Abstract

Keywords

ASJC Scopus subject areas

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