Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII: A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD

Matthew N. McCain; Andrew W. Metz; Yu Yang; Charlotte L. Stern; Tobin J. Marks

doi:10.1002/cvde.200404200

Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-Cu^II: A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD

Matthew N. McCain^*, Andrew W. Metz, Yu Yang, Charlotte L. Stern, Tobin J. Marks

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH₂CF₃)₂, CS ₂ and CuCl₂ 2H₂O in ether under N₂. The volatility characteristics of the compound were analyzed and compared to those of Cu[S₂CN(CH₂Ch₃)₂] ₂ using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.

Original language	English (US)
Pages (from-to)	291-294
Number of pages	4
Journal	Chemical Vapor Deposition
Volume	11
Issue number	6-7
DOIs	https://doi.org/10.1002/cvde.200404200
State	Published - Jul 2005

ASJC Scopus subject areas

General Chemistry
Surfaces and Interfaces
Process Chemistry and Technology

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title = "Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII: A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD",

abstract = "The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.",

author = "McCain, {Matthew N.} and Metz, {Andrew W.} and Yu Yang and Stern, {Charlotte L.} and Marks, {Tobin J.}",

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journal = "Chemical Vapor Deposition",

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T1 - Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII

T2 - A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD

AU - McCain, Matthew N.

AU - Metz, Andrew W.

AU - Yang, Yu

AU - Stern, Charlotte L.

AU - Marks, Tobin J.

PY - 2005/7

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N2 - The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.

AB - The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.

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Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-Cu^II: A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD

Abstract

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