Boron–oxygen complex yields n-type surface layer in semiconducting diamond

Xiaobing Liu*, Xin Chen, David J. Singh, Richard A. Stern, Jinsong Wu, Sylvain Petitgirard, Craig R. Bina, Steven D. Jacobsen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (∼0.778 × 1021 cm−3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ∼1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B3O and B4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.

Original languageEnglish (US)
Pages (from-to)7703-7711
Number of pages9
JournalProceedings of the National Academy of Sciences of the United States of America
Volume116
Issue number16
DOIs
StatePublished - Apr 16 2019

Keywords

  • Boron
  • Defects
  • Diamond
  • High pressure
  • Semiconductor

ASJC Scopus subject areas

  • General

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