Breaking Spectral and Performance Barriers for Diode Lasers with Material Innovation

Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

From humble beginnings, diode laser technology has evolved to become an invaluable tool for many aspects of our daily lives. Diode lasers exhibit a number of favorable properties which have led to their wide adoption, including compactness, robustness, and mass producibility. Just as important is the ability to engineer the emission wavelength and performance to be suitable for an application of interest. However, accomplishing this often requires significant innovation. A principal illustration of this was the development of 1.3 and 1.55 micron wavelength lasers for telecommunication, which required innovations in InP-based Quantum physics, atomic engineering, and material growth. Other examples include Al-free near infrared lasers for high efficiency solid state laser pumping and the III-Nitride materials for blue/violet laser diodes.

Original languageEnglish (US)
Title of host publication31st Annual Conference of the IEEE Photonics Society, IPC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538653586
DOIs
StatePublished - Nov 6 2018
Event31st Annual Conference of the IEEE Photonics Society, IPC 2018 - Reston, United States
Duration: Sep 30 2018Oct 4 2018

Other

Other31st Annual Conference of the IEEE Photonics Society, IPC 2018
CountryUnited States
CityReston
Period9/30/1810/4/18

Fingerprint

Semiconductor lasers
Innovation
semiconductor lasers
Atomic physics
Pumping (laser)
Wavelength
laser pumping
Infrared lasers
atomic physics
Solid state lasers
void ratio
solid state lasers
wavelengths
Nitrides
infrared lasers
engineers
Telecommunication
nitrides
telecommunication
engineering

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Razeghi, M. (2018). Breaking Spectral and Performance Barriers for Diode Lasers with Material Innovation. In 31st Annual Conference of the IEEE Photonics Society, IPC 2018 [8527230] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2018.8527230
Razeghi, Manijeh. / Breaking Spectral and Performance Barriers for Diode Lasers with Material Innovation. 31st Annual Conference of the IEEE Photonics Society, IPC 2018. Institute of Electrical and Electronics Engineers Inc., 2018.
@inproceedings{d5e0abd811de4278b3e7e48a3760c46b,
title = "Breaking Spectral and Performance Barriers for Diode Lasers with Material Innovation",
abstract = "From humble beginnings, diode laser technology has evolved to become an invaluable tool for many aspects of our daily lives. Diode lasers exhibit a number of favorable properties which have led to their wide adoption, including compactness, robustness, and mass producibility. Just as important is the ability to engineer the emission wavelength and performance to be suitable for an application of interest. However, accomplishing this often requires significant innovation. A principal illustration of this was the development of 1.3 and 1.55 micron wavelength lasers for telecommunication, which required innovations in InP-based Quantum physics, atomic engineering, and material growth. Other examples include Al-free near infrared lasers for high efficiency solid state laser pumping and the III-Nitride materials for blue/violet laser diodes.",
author = "Manijeh Razeghi",
year = "2018",
month = "11",
day = "6",
doi = "10.1109/IPCon.2018.8527230",
language = "English (US)",
booktitle = "31st Annual Conference of the IEEE Photonics Society, IPC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Razeghi, M 2018, Breaking Spectral and Performance Barriers for Diode Lasers with Material Innovation. in 31st Annual Conference of the IEEE Photonics Society, IPC 2018., 8527230, Institute of Electrical and Electronics Engineers Inc., 31st Annual Conference of the IEEE Photonics Society, IPC 2018, Reston, United States, 9/30/18. https://doi.org/10.1109/IPCon.2018.8527230

Breaking Spectral and Performance Barriers for Diode Lasers with Material Innovation. / Razeghi, Manijeh.

31st Annual Conference of the IEEE Photonics Society, IPC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8527230.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Breaking Spectral and Performance Barriers for Diode Lasers with Material Innovation

AU - Razeghi, Manijeh

PY - 2018/11/6

Y1 - 2018/11/6

N2 - From humble beginnings, diode laser technology has evolved to become an invaluable tool for many aspects of our daily lives. Diode lasers exhibit a number of favorable properties which have led to their wide adoption, including compactness, robustness, and mass producibility. Just as important is the ability to engineer the emission wavelength and performance to be suitable for an application of interest. However, accomplishing this often requires significant innovation. A principal illustration of this was the development of 1.3 and 1.55 micron wavelength lasers for telecommunication, which required innovations in InP-based Quantum physics, atomic engineering, and material growth. Other examples include Al-free near infrared lasers for high efficiency solid state laser pumping and the III-Nitride materials for blue/violet laser diodes.

AB - From humble beginnings, diode laser technology has evolved to become an invaluable tool for many aspects of our daily lives. Diode lasers exhibit a number of favorable properties which have led to their wide adoption, including compactness, robustness, and mass producibility. Just as important is the ability to engineer the emission wavelength and performance to be suitable for an application of interest. However, accomplishing this often requires significant innovation. A principal illustration of this was the development of 1.3 and 1.55 micron wavelength lasers for telecommunication, which required innovations in InP-based Quantum physics, atomic engineering, and material growth. Other examples include Al-free near infrared lasers for high efficiency solid state laser pumping and the III-Nitride materials for blue/violet laser diodes.

UR - http://www.scopus.com/inward/record.url?scp=85058268016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058268016&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2018.8527230

DO - 10.1109/IPCon.2018.8527230

M3 - Conference contribution

BT - 31st Annual Conference of the IEEE Photonics Society, IPC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Razeghi M. Breaking Spectral and Performance Barriers for Diode Lasers with Material Innovation. In 31st Annual Conference of the IEEE Photonics Society, IPC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8527230 https://doi.org/10.1109/IPCon.2018.8527230