Breath figure–derived porous semiconducting films for organic electronics

Xinan Zhang; Binghao Wang; Lizhen Huang; Wei Huang; Zhi Wang; Weigang Zhu; Yao Chen; Yan Li Mao; Antonio Facchetti; Tobin J. Marks

doi:10.1126/sciadv.aaz1042

Breath figure–derived porous semiconducting films for organic electronics

Xinan Zhang, Binghao Wang, Lizhen Huang, Wei Huang, Zhi Wang, Weigang Zhu, Yao Chen, Yan Li Mao^*, Antonio Facchetti, Tobin J. Marks

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

97 Scopus citations

Abstract

Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO₂ using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).

Original language	English (US)
Journal	Science Advances
Volume	6
Issue number	13
DOIs	https://doi.org/10.1126/sciadv.aaz1042
State	Published - 2020

Funding

We thank AFOSR (FA9550-18-1-0320), the Northwestern University MRSEC (NSF DMR-1720139), and Flexterra Inc. for support of this research. X.Z. thanks the National Natural Science Foundation of China (grant no. U1504625) and the Youth Backbone Teacher Training Program in Henan province (grant no. 2017GGJS021). This work made use of the J. B. Cohen X-Ray Diffraction Facility, EPIC facility, Keck-II facility, and SPID facility of the NUANCE Center at Northwestern University, which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205), the MRSEC program (NSF DMR-1720139) at the Materials Research Center, the International Institute for Nanotechnology (IIN), the Keck Foundation, and the State of Illinois, through the IIN.

ASJC Scopus subject areas

General

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title = "Breath figure–derived porous semiconducting films for organic electronics",

abstract = "Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO2 using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).",

author = "Xinan Zhang and Binghao Wang and Lizhen Huang and Wei Huang and Zhi Wang and Weigang Zhu and Yao Chen and Mao, {Yan Li} and Antonio Facchetti and Marks, {Tobin J.}",

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doi = "10.1126/sciadv.aaz1042",

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AU - Zhang, Xinan

AU - Wang, Binghao

AU - Huang, Lizhen

AU - Huang, Wei

AU - Wang, Zhi

AU - Zhu, Weigang

AU - Chen, Yao

AU - Mao, Yan Li

AU - Facchetti, Antonio

AU - Marks, Tobin J.

PY - 2020

Y1 - 2020

N2 - Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO2 using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).

AB - Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO2 using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).

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Breath figure–derived porous semiconducting films for organic electronics

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